2SD1615
器件描述：NPN SILICON EPITAXIAL TRANSISTORS POWER MINI MOLD
器件厂商：NEC [NEC]
文件大小：49.75KB，共4页
Sponsor by e络盟器件资料摘要：
SILICON TRANSISTORS
2SD1615, 2SD1615A
Document No. D10198EJ3V0DSD0 (3rd edition)
(Previous No. TC-5810A)
Date Published June 1995 P
Printed in Japan
NPN SILICON EPITAXIAL TRANSISTORS
POWER MINI MOLD
DESCRIPTION
2SD1615, 1615A are designed for audio frequency power amplifier and switching application, especially
in Hybrid Integrated Circuits.
FEATURES
• World Standard Miniature Package
• Low VCE (sat) VCE(sat) = 0.15 V
• Complement to 2SB1115, 2SD1115A
ABSOLUTE MAXIMUM RATINGS
Maximum Voltages and Currents (TA = 25 ˚C) 2SD1615 2SD1615A
Collector to Base Voltage VCBO 60 120 V
Collector to Emitter Voltage VCEO 50 60 V
Emitter to Base Voltage VEBO 6A
Collector Current (DC) IC 1A
Collector Current (Pulse)* IC 2A
Maximum Power Dissipation
Total Power Dissipation
at 25 ˚C Ambient Temperature** PT 2.0 W
Maximum Temperatures
Junction Temperature Tj 150 ˚C
Storage Temperature Range Tstg –55 to +150 ˚C
* PW ≤ 10 ms, Duty Cycle ≤ 50 %
** When mounted on ceramic substrate of 16 cm
2
× 0.7 mm
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS
Collector Cutoff Current ICBO 100 nA 2SD1615 VCB = 60 V, IE = 0
100 nA 2SD1615A VCB = 120 V, IE = 0
Emitter Cutoff Current IEBO 100 nA VEB = 6.0 V, IC = 0
DC Current Gain hFE1*** 135 290 600 2SC1615 VCE = 2.0 V, IC = 100 mA
135 400 2SD1615A
DC Current Gain hFE2*** 81 270 VCE = 2.0 V, IC = 1.0 A
Collector Saturation Voltage VCE(sat)*** 0.15 0.3 V IC = 1.0 A, IB = 50 mA
Base Saturation Voltage VBE(sat)*** 0.9 1.2 V IC = 1.0 A, IB = 50 mA
Base to Emitter Voltage VBE*** 600 700 mV VCE = 2.0 V, IC = 50 mA
Gain Bandwidth Product fT 80 160 MHz VCE = 2.0 V, IE = –100 mA
Output Capacitance Cob 19 pF VCB = 10 V, IE = 0, f = 1.0 MHz
*** Pulsed: PW ≤ 350 µs, Duty Cycle ≤ 2 %
hFE Classification
MARKING 2SD1615 GM GL GK
2SD1615A GQ GP
hFE 135 to 270 200 to 400 300 to 600
© 1985
DATA SHEET
C
EB
4.5 ± 0.1
1.6 ± 0.2
0.42 ± 0.06
0.42
± 0.06
1.5 ± 0.1
2.5 ±
0.1
0.8 MIN.
4.0 ±
0.25
1.5
3.0
0.41
+ 0.03
– 0.05
1. Emitter
2. Collector
3. Base
0.47
± 0.06
PACKAGE DIMENSIONS
in millimeters
2SD1615, 2SD1615A
Document No. D10198EJ3V0DSD0 (3rd edition)
(Previous No. TC-5810A)
Date Published June 1995 P
Printed in Japan
NPN SILICON EPITAXIAL TRANSISTORS
POWER MINI MOLD
DESCRIPTION
2SD1615, 1615A are designed for audio frequency power amplifier and switching application, especially
in Hybrid Integrated Circuits.
FEATURES
• World Standard Miniature Package
• Low VCE (sat) VCE(sat) = 0.15 V
• Complement to 2SB1115, 2SD1115A
ABSOLUTE MAXIMUM RATINGS
Maximum Voltages and Currents (TA = 25 ˚C) 2SD1615 2SD1615A
Collector to Base Voltage VCBO 60 120 V
Collector to Emitter Voltage VCEO 50 60 V
Emitter to Base Voltage VEBO 6A
Collector Current (DC) IC 1A
Collector Current (Pulse)* IC 2A
Maximum Power Dissipation
Total Power Dissipation
at 25 ˚C Ambient Temperature** PT 2.0 W
Maximum Temperatures
Junction Temperature Tj 150 ˚C
Storage Temperature Range Tstg –55 to +150 ˚C
* PW ≤ 10 ms, Duty Cycle ≤ 50 %
** When mounted on ceramic substrate of 16 cm
2
× 0.7 mm
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS
Collector Cutoff Current ICBO 100 nA 2SD1615 VCB = 60 V, IE = 0
100 nA 2SD1615A VCB = 120 V, IE = 0
Emitter Cutoff Current IEBO 100 nA VEB = 6.0 V, IC = 0
DC Current Gain hFE1*** 135 290 600 2SC1615 VCE = 2.0 V, IC = 100 mA
135 400 2SD1615A
DC Current Gain hFE2*** 81 270 VCE = 2.0 V, IC = 1.0 A
Collector Saturation Voltage VCE(sat)*** 0.15 0.3 V IC = 1.0 A, IB = 50 mA
Base Saturation Voltage VBE(sat)*** 0.9 1.2 V IC = 1.0 A, IB = 50 mA
Base to Emitter Voltage VBE*** 600 700 mV VCE = 2.0 V, IC = 50 mA
Gain Bandwidth Product fT 80 160 MHz VCE = 2.0 V, IE = –100 mA
Output Capacitance Cob 19 pF VCB = 10 V, IE = 0, f = 1.0 MHz
*** Pulsed: PW ≤ 350 µs, Duty Cycle ≤ 2 %
hFE Classification
MARKING 2SD1615 GM GL GK
2SD1615A GQ GP
hFE 135 to 270 200 to 400 300 to 600
© 1985
DATA SHEET
C
EB
4.5 ± 0.1
1.6 ± 0.2
0.42 ± 0.06
0.42
± 0.06
1.5 ± 0.1
2.5 ±
0.1
0.8 MIN.
4.0 ±
0.25
1.5
3.0
0.41
+ 0.03
– 0.05
1. Emitter
2. Collector
3. Base
0.47
± 0.06
PACKAGE DIMENSIONS
in millimeters