1
Power Transistors
2SD1611
Silicon NPN triple diffusion planar type Darlington
For power amplification
n
Features
l High foward current transfer ratio h
FE
l High collector to base voltage V
CBO
l N type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
n
Absolute Maximum Ratings (T
C
=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
500
400
5
10
6
40
1.3
150
–55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
n
Electrical Characteristics (T
C
=25˚C)
Parameter
Collector cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Symbol
I
CBO
V
CEO(sus)
V
EBO
h
FE
V
CE(sat)
V
BE(sat)
f
T
Conditions
V
CB
= 350V, I
E
= 0
I
C
= 2A, L = 10mH
I
E
= 0.1A, I
C
= 0
V
CE
= 2V, I
C
= 2A
I
C
= 3A, I
B
= 0.06A
I
C
= 3A, I
B
= 0.06A
V
CE
= 10V, I
C
= 1A, f = 1MHz
min
400
5
500
typ
15
max
100
1.5
2.5
Unit
m A
V
V
V
V
MHz
T
C
=25 C
Ta=25 C
Internal Connection
B
C
E
Unit: mm
1:Base
2:Collector
3:Emitter
N Type Package
8.5– 0.2
6.0– 0.5
10.0
–
0.3
10.5min.
2.0
1.5
–
0.1
1.5max.
0.8– 0.1
5.08– 0.5
2.54– 0.3
1.1max.
0.5max.
1.0– 0.1
3.4– 0.3
213
Unit: mm
8.5– 0.2
4.4
–
0.5 2.0
10.0
–
0.3
14.7
–
0.5
4.4
–
0.5
6.0– 0.3
3.4– 0.3
2.54– 0.3
5.08– 0.5
1.0– 0.1
0.8– 0.1
1.5
+0 –0.4
3.0
+0.4 –0.2
0 to 0.4
1.1 max.
R0.5
R0.5
123
1:Base
2:Collector
3:Emitter
N Type Package (DS)