2SD1609, 2SD1610
Silicon NPN Epitaxial
Application
Low frequency high voltage amplifier complementary pair with 2SB1109 and 2SB1110
Outline
1. Emitter
2. Collector
3. Base
TO-126 MOD
1
2
3
Absolute Maximum Ratings (Ta = 25°C)
Ratings
Item Symbol 2SD1609 2SD1610 Unit
Collector to base voltage V
CBO
160 200 V
Collector to emitter voltage V
CEO
160 200 V
Emitter to base voltage V
EBO
55V
Collector current I
C
100 100 mA
Collector power dissipation P
C
1.25 1.25 W
Junction temperature Tj 150 150 C
Storage temperature Tstg –45 to +150 –45 to +150 C