1
Power Transistors
2SD1538, 2SD1538A
Silicon NPN epitaxial planar type
For low-voltage switching
Complementary to 2SB1070 and 2SB1070A
n
Features
l Low collector to emitter saturation voltage V
CE(sat)
l High-speed switching
l N type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
n
Absolute Maximum Ratings (T
C
=25˚C)
Parameter
Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
40
50
20
40
5
8
4
25
1.3
150
–55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
2SD1538
2SD1538A
2SD1538
2SD1538A
T
C
=25 C
Ta=25 C
n
Electrical Characteristics (T
C
=25˚C)
Parameter
Collector cutoff
current
Emitter cutoff current
Collector to emitter
voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Symbol
I
CBO
I
EBO
V
CEO
h
FE1
h
FE2
*
V
CE(sat)
V
BE(sat)
f
T
t
on
t
stg
t
f
Conditions
V
CB
= 40V, I
E
= 0
V
CB
= 50V, I
E
= 0
V
EB
= 5V, I
C
= 0
I
C
= 10mA, I
B
= 0
V
CE
= 2V, I
C
= 0.1A
V
CE
= 2V, I
C
= 1A
I
C
= 2A, I
B
= 0.1A
I
C
= 2A, I
B
= 0.1A
V
CE
= 5V, I
C
= 0.5A, f = 10MHz
I
C
= 2A, I
B1
= 0.2A, I
B2
= – 0.2A,
V
CC
= 20V
min
20
40
45
90
typ
120
0.2
0.5
0.1
max
50
50
50
260
0.5
1.5
Unit
m A
m A
V
V
V
MHz
m s
m s
m s
2SD1538
2SD1538A
2SD1538
2SD1538A
*
h
FE2
Rank classification
Rank Q P
h
FE2
90 to 180 130 to 260
Unit: mm
1:Base
2:Collector
3:Emitter
N Type Package
8.5– 0.2
6.0– 0.5
10.0
–
0.3
10.5min.
2.0
1.5
–
0.1
1.5max.
0.8– 0.1
5.08– 0.5
2.54– 0.3
1.1max.
0.5max.
1.0– 0.1
3.4– 0.3
213
Unit: mm
8.5– 0.2
4.4
–
0.5 2.0
10.0
–
0.3
14.7
–
0.5
4.4
–
0.5
6.0– 0.3
3.4– 0.3
2.54– 0.3
5.08– 0.5
1.0– 0.1
0.8– 0.1
1.5
+0 –0.4
3.0
+0.4 –0.2
0 to 0.4
1.1 max.
R0.5
R0.5
123
1:Base
2:Collector
3:Emitter
N Type Package (DS)