2SD1527
器件描述：Silicon NPN Triple Diffused
器件厂商：HITACHI [Hitachi Semiconductor]
文件大小：32.91KB，共7页
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2SD1527
Silicon NPN Triple Diffused
Application
High voltage power amplifier
Outline
1. Base
2. Collector
(Flange)
3. Emitter
TO-220AB
1
2
3
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Rating Unit
Collector to base voltage V
CBO
1000 V
Collector to emitter voltage V
CEO
1000 V
Emitter to base voltage V
EBO
5V
Collector current I
C
0.5 A
Collector power dissipation P
C
1.8 W
P
C
*
1
25 W
Junction temperature Tj 150 C
Storage temperature Tstg –55 to +150 C
Note: 1. Value at T
C
= 25 C.
Silicon NPN Triple Diffused
Application
High voltage power amplifier
Outline
1. Base
2. Collector
(Flange)
3. Emitter
TO-220AB
1
2
3
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Rating Unit
Collector to base voltage V
CBO
1000 V
Collector to emitter voltage V
CEO
1000 V
Emitter to base voltage V
EBO
5V
Collector current I
C
0.5 A
Collector power dissipation P
C
1.8 W
P
C
*
1
25 W
Junction temperature Tj 150 C
Storage temperature Tstg –55 to +150 C
Note: 1. Value at T
C
= 25 C.