1
Power Transistors
2SD1535
Silicon NPN triple diffusion planar type Darlington
For high power amplification
n
Features
l Extremely satisfactory linearity of the forward current transfer
ratio h
FE
l High collector to base voltage V
CBO
l Wide area of safe operation (ASO)
l Full-pack package which can be installed to the heat sink with
one screw
n
Absolute Maximum Ratings (T
C
=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
I
B
P
C
T
j
T
stg
Ratings
500
400
12
14
7
0.5
50
2
150
–55 to +150
Unit
V
V
V
A
A
A
W
˚C
˚C
n
Electrical Characteristics (T
C
=25˚C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Symbol
I
CBO
I
CEO
I
EBO
V
CEO(sus)
*
h
FE1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
t
on
t
stg
t
f
Conditions
V
CB
= 500V, I
E
= 0
V
CE
= 400V, I
B
= 0
V
EB
= 12V, I
C
= 0
I
C
= 100mA, R
BZ
= ¥ , L = 25mH
V
CE
= 2V, I
C
= 2A
V
CE
= 2V, I
C
= 6A
I
C
= 7A, I
B
= 70mA
I
C
= 7A, I
B
= 70mA
V
CE
= 10V, I
C
= 0.5A, f = 1MHz
I
C
= 7A, I
B1
= 70mA, I
B2
= –70mA,
V
CC
= 300V
min
400
500
200
typ
20
1.5
5.0
6.5
max
0.1
0.1
100
2.0
2.5
Unit
mA
mA
mA
mA
V
V
MHz
m s
m s
m s
*
V
CEO(sus)
Test circuit
T
C
=25 C
Ta=25 C
X
L 25mH
15V
1W
Y
G
6V
120W
60Hz
I
C
(A)
0.2
0.1
80
V
CE
(V)
Unit: mm
Internal Connection
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
10.0– 0.2
5.5– 0.2
7.5
–
0.2
16.7
–
0.3
0.7
–
0.1
14.0
–
0.5
Solder Dip
4.0
0.5
+0.2
–0.1
1.4– 0.1
1.3– 0.2
0.8– 0.1
2.54– 0.25
5.08– 0.5
213
2.7– 0.2
4.2– 0.2
4.2
–
0.2
f 3.1– 0.1
B
C
E