2SD1521
Silicon NPN Epitaxial
Application
Low frequency power amplifier
Outline
TO-126 MOD
1. Emitter
2. Collector
3. Base
1
2
3
2 kΩ
(Typ)
0.5 kΩ
(Typ)
I
D
3
2
1
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Rating Unit
Collector to emitter voltage V
CEO
50 V
Emitter to base voltage V
EBO
7V
Collector current I
C
1.5 A
Collector peak current I
C (peak)
3.0 A
Collector power dissipation P
C
10 W
Junction temperature Tj 150 C
Storage temperature Tstg –55 to +150 C
C to E diode forward current I
D
*
1
1.5 A
Note: 1. Value at T
C
= 25 C.