1
Transistor
2SD1511
Silicon NPN epitaxial planer type darlington
For low-frequency output amplification
n
Features
l Forward current transfer ratio h
FE
is designed high, which is ap-
propriate to the driver circuit of motors and printer bammer: h
FE
= 4000 to 2000.
l A shunt resistor is omitted from the driver.
l Mini Power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
n
Absolute Maximum Ratings (Ta=25˚C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Base
2:Collector EIAJ:SC–62
3:Emitter Mini Power Type Package
4.5– 0.1
2.6
–
0.1
2.5
–
0.1
0.4max.
1.0
+0.1 –0.2
4.0
+0.25 –0.20
3.0– 0.15
1.5– 0.1
0.4– 0.08
0.5– 0.08
1.5– 0.1
0.4– 0.04
1.6– 0.2
45°
marking
321
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
*
T
j
T
stg
Ratings
100
80
5
1.5
1
1
150
–55 ~ +150
Unit
V
V
V
A
A
W
˚C
˚C
n
Electrical Characteristics (Ta=25˚C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Symbol
I
CBO
I
EBO
V
CBO
V
CEO
V
EBO
h
FE
*1
V
CE(sat)
V
BE(sat)
f
T
Conditions
V
CB
= 25V, I
E
= 0
V
EB
= 4V, I
C
= 0
I
C
= 100m A, I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 100m A, I
C
= 0
V
CE
= 10V, I
C
= 1A
*2
I
C
= 1.0A, I
B
= 1.0mA
*2
I
C
= 1.0A, I
B
= 1.0mA
*2
V
CB
= 10V, I
E
= –50mA, f = 200MHz
min
100
80
5
4000
typ
150
max
100
100
40000
1.8
2.2
Unit
nA
nA
V
V
V
V
V
MHz
*2
Pulse measurement
*
Printed circuit board: Copper foil area of 1cm
2
or more, and the board
thickness of 1.7mm for the collector portion
Marking symbol : P
Internal Connection
B
C
E
*1
h
FE
Rank classification
Rank Q R S
h
FE
4000 ~ 10000 8000 ~ 20000 16000 ~ 40000
Marking Symbol PQ PR PS