1
Power Transistors
2SD1499
Silicon NPN triple diffusion planar type
For high power amplification
Complementary to 2SB1063
n
Features
l Extremely satisfactory linearity of the forward current transfer
ratio h
FE
l Wide area of safe operation (ASO)
l High transition frequency f
T
l Full-pack package which can be installed to the heat sink with
one screw
n
Absolute Maximum Ratings (T
C
=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Unit
V
V
V
A
A
W
˚C
˚C
T
C
=25 C
Ta=25 C
n
Electrical Characteristics (T
C
=25˚C)
Parameter
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
I
EBO
h
FE1
h
FE2
*
h
FE3
V
BE
V
CE(sat)
f
T
C
ob
Conditions
V
CB
= 100V, I
E
= 0
V
EB
= 3V, I
C
= 0
V
CE
= 5V, I
C
= 20mA
V
CE
= 5V, I
C
= 1A
V
CE
= 5V, I
C
= 3A
V
CE
= 5V, I
C
= 3A
I
C
= 3A, I
B
= 0.3A
V
CE
= 5V, I
C
= 0.5A, f = 1MHz
V
CB
= 10V, f = 1MHz
min
20
60
20
typ
20
90
max
50
50
200
1.8
2.0
Unit
m A
m A
V
V
MHz
pF
*
h
FE2
Rank classification
Rank Q P
h
FE2
60 to 120 100 to 200
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
100
100
5
8
5
40
2
150
–55 to +155
Unit: mm
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
10.0– 0.2
5.5– 0.2
7.5
–
0.2
16.7
–
0.3
0.7
–
0.1
14.0
–
0.5
Solder Dip
4.0
0.5
+0.2
–0.1
1.4– 0.1
1.3– 0.2
0.8– 0.1
2.54– 0.25
5.08– 0.5
213
2.7– 0.2
4.2– 0.2
4.2
–
0.2
f 3.1– 0.1