Medium Power Transistor (50V,0.5A)
2SD1949 / 2SD1484K
Symbol
V
CBO
V
CEO
V
EBO
I
C
PC
Tj
Tstg
Limits
50
50
5
0.5
0.2
150
−55 to +150
Unit
V
V
V
A
W
Symbol Min. Typ. Max. Unit Conditions
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
f
T
Cob
50
50
5
−
−
120
−
−
−
−
−
−
−
−
250
6.5
−
−
−
0.5
0.5
390
−
−
V
V
V
−
MHz
pF
I
C
=1mA
V
CB
=30V
V
EB
=4V
V
CE
/I
C
=3V/0.01A
V
CE
=5V , I
E
= −20mA , f=100MHz
V
CB
=10V , I
E
=0A , f=1MHz
2SD1484K
SMT3
QR
T146
3000
Transistors
2SD1949 / 2SD1484K
C
C
µA
I
C
=100µA
I
E
=100µA
µA
1/2
Parameter
Transition frequency
Output capacitance
V
CE(sat) −−0.4 VIC/IB=150mA/15mA
Electrical characteristics (Ta=25 C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector outoff current
Collector power dissipation
Junction temperature
Storage temperature
Absolute maximum rationgs (Ta=25 C)
Packaging specifications and h
FE
Type
Package
h
FE
Code
Basic ordering unit (pleces)
2SD1949
UMT3
QR
T106
3000
Marking
Danotes hFE
Y Y
Features
1) High current.(IC=5A)
2) Low saturation voltage, typically VCE(sat)=0.1V at IC / IB=150mA / 15mA.
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Emitter cutoff current
DC current rransfer ratio
Collector-emitter saturation voltage
Rev.B