1
Transistor
2SD1423, 2SD1423A
Silicon NPN epitaxial planer type
For low-frequency amplification
Complementary to 2SB1030 and 2SB1030A
n
Features
l Optimum for high-density mounting.
l Allowing supply with the radial taping.
n
Absolute Maximum Ratings (Ta=25˚C)
Unit: mm
Parameter
Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Emitter
2:Collector EIAJ:SC–72
3:Base New S Type Package
4.0– 0.2
marking
2.54– 0.15
1.271.27
3.0
–
0.2
15.6
–
0.5
2.0
–
0.2
0.7
–
0.1
0.45
–
0.1
123
+0.2
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
30
60
25
50
7
1
0.5
300
150
–55 ~ +150
Unit
V
V
V
A
A
mW
˚C
˚C
2SD1423
2SD1423A
2SD1423
2SD1423A
n
Electrical Characteristics (Ta=25˚C)
Parameter
Collector cutoff current
Collector to base
voltage
Collector to emitter
voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
I
CEO
V
CBO
V
CEO
V
EBO
h
FE1
*1
h
FE2
V
CE(sat)
f
T
C
ob
Conditions
V
CB
= 20V, I
E
= 0
V
CE
= 20V, I
B
= 0
I
C
= 10m A, I
E
= 0
I
C
= 2mA, I
B
= 0
I
E
= 10m A, I
C
= 0
V
CE
= 10V, I
C
= 150mA
*2
V
CE
= 10V, I
C
= 500mA
*2
I
C
= 300mA, I
B
= 30mA
*2
V
CB
= 10V, I
E
= –50mA, f = 200MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
min
30
60
25
50
7
85
40
typ
200
6
max
0.1
1
340
0.6
15
Unit
m A
m A
V
V
V
V
MHz
pF
*1
h
FE1
Rank classification
Rank Q R S
h
FE1
85 ~ 170 120 ~ 240 170 ~ 340
*2
Pulse measurement
2SD1423
2SD1423A
2SD1423
2SD1423A