2SD1381F
器件描述:Power Transistor (80V, 1A)
文件大小:89.47KB,共4页
Sponsor by e络盟
器件资料摘要:
2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 / 2SD1381F
Transistors
Power Transistor (80V, 1A)
2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 /
2SD1381F
!Features
1) High VCEO, VCEO=80V
2) High IC, IC=1A (DC)
3) Good hFE linearity
4) Low VCE (sat)
5) Complements the 2SB1260 /
2SB1241 / 2SB1181
!Structure
Epitaxial planer type
NPN silicon transistor
!External dimensions (Units : mm)
(1) Emitter
(2) Collector
(3) BaseROHM : TO-126FP
(1) Emitter
(2) Collector
(3) Base
ROHM : SPT
EIAJ : SC-72
2SD1768S
2SD1381F
(1) Emitter
(2) Collector
(3) BaseROHM : ATV
2SD1863
(1) Base
(2) Collector
(3) Emitter
ROHM : CPT3
EIAJ : SC-63
2SD1733
(1) Base
(2) Collector
(3) Emitter
ROHM : MPT3
EIAJ : SC-62
2SD1898
Abbreviated symbol : DF
−
0.1
+
0.2
−0.05
+0.1
−0.1
+0.2
+0.2
−0.1
(3)(2)(1)
4.0±0.3
1.0±0.2
0.5±0.1
2.5
3.0±0.2
1.5±0.11.5±0.1
0.4±0.1 0.5±0.1 0.4±0.1
0.4
1.5
4.5
1.6±0.1
−0.1
+0.2
+
0.3
−
0.1
2.3±0.22.3±0.2
0.65±0.1
0.9
0.75
5.5
1.5
±
0.3
6.5±0.2
5.1
C0.5
(3)(2)(1)
0.9
−0.1
+0.2
1.0±0.2
0.55±0.1
9.5
±
0.5
2.5
1.5
2.3
0.5±0.1 3±0.2
(15Min.)
4±0.2
0.45
5
(1) (2) (3)
+0.15
−0.05
2.5
+0.4
−0.1
3Min.
2±0.2
0.45
0.5 −0.05
+0.15
7.8±0.2
Front φ3.3
Back φ3.19
3.2±0.2
0.8
2.3±0.5 2.3±0.5 0.7±0.1
1.6
1.75
0.95
1.2
1.1
10.8±0.2
16.0±0.5
C0.7
(2) (3)(1)
6.9
9.2
1.76±0.5
1.0
6.8±0.2
2.5±0.2
1.05 0.45±0.1
2.54 2.54
0.5±0.1
0.9 4.4±0.2
14.5±0.5
(1) (2) (3)
0.65Max.