1
Power Transistors
2SD1264, 2SD1264A
Silicon NPN triple diffusion planar type
For low-freauency power amplification
For TV vertical deflection output
Complementary to 2SB940 and 2SB940A
n
Features
l High collector to emitter V
CEO
l Large collector power dissipation P
C
l Full-pack package which can be installed to the heat sink with
one screw
n
Absolute Maximum Ratings (T
C
=25˚C)
Parameter
Collector to base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
200
150
180
6
3
2
30
2
150
–55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
2SD1264
2SD1264A
T
C
=25 C
Ta=25 C
*
h
FE1
Rank classification
Rank Q P
h
FE1
60 to 140 100 to 240
n
Electrical Characteristics (T
C
=25˚C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to base voltage
Collector to emitter
voltage
Emitter to base voltage
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Symbol
I
CBO
I
EBO
V
CBO
V
CEO
V
EBO
h
FE1
*
h
FE2
V
BE
V
CE(sat)
f
T
Conditions
V
CB
= 200V, I
E
= 0
V
EB
= 4V, I
C
= 0
I
C
= 50m A, I
E
= 0
I
C
= 5mA, I
B
= 0
I
E
= 500m A, I
C
= 0
V
CE
= 10V, I
C
= 150mA
V
CE
= 10V, I
C
= 400mA
V
CE
= 10V, I
C
= 400mA
I
C
= 500mA, I
B
= 50mA
V
CE
= 5V, I
C
= 0.5A, f = 1MHz
min
200
150
180
6
60
50
typ
20
max
50
50
240
1
1
Unit
m A
m A
V
V
V
V
V
MHz
2SD1264
2SD1264A
Unit: mm
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
10.0– 0.2
5.5– 0.2
7.5
–
0.2
16.7
–
0.3
0.7
–
0.1
14.0
–
0.5
Solder Dip
4.0
0.5
+0.2
–0.1
1.4– 0.1
1.3– 0.2
0.8– 0.1
2.54– 0.25
5.08– 0.5
213
2.7– 0.2
4.2– 0.2
4.2
–
0.2
f 3.1– 0.1