1
Power Transistors
2SD1259, 2SD1259A
Silicon NPN triple diffusion planar type
For power amplification with high forward current transfer ratio
n
Features
l High foward current transfer ratio h
FE
l Satisfactory linearity of foward current transfer ratio h
FE
l N type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
n
Absolute Maximum Ratings (T
C
=25˚C)
Parameter
Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
I
B
P
C
T
j
T
stg
Ratings
80
100
60
80
6
6
3
1
40
1.3
150
–55 to +150
Unit
V
V
V
A
A
A
W
˚C
˚C
2SD1259
2SD1259A
2SD1259
2SD1259A
T
C
=25 C
Ta=25 C
n
Electrical Characteristics (T
C
=25˚C)
Parameter
Collector cutoff
current
Collector cutoff current
Emitter cutoff current
Collector to emitter
voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Symbol
I
CES
I
CEO
I
EBO
V
CEO
h
FE
*
V
CE(sat)
f
T
Conditions
V
CE
= 80V, I
E
= 0
V
CE
= 100V, I
E
= 0
V
CE
= 40V, I
B
= 0
V
CB
= 6V, I
C
= 0
I
C
= 25mA, I
B
= 0
V
CE
= 4V, I
C
= 0.5A
I
C
= 2A, I
B
= 0.05A
V
CE
= 12V, I
C
= 0.2A, f = 10MHz
min
60
80
500
typ
50
max
100
100
100
100
2500
1
Unit
m A
m A
m A
V
V
MHz
2SD1259
2SD1259A
2SD1259
2SD1259A
*
h
FE
Rank classification
Rank Q P O
h
FE
500 to 1000 800 to 1500 1200 to 2500
Unit: mm
1:Base
2:Collector
3:Emitter
N Type Package
8.5– 0.2
6.0– 0.5
10.0
–
0.3
10.5min.
2.0
1.5
–
0.1
1.5max.
0.8– 0.1
5.08– 0.5
2.54– 0.3
1.1max.
0.5max.
1.0– 0.1
3.4– 0.3
213
Unit: mm
8.5– 0.2
4.4
–
0.5 2.0
10.0
–
0.3
14.7
–
0.5
4.4
–
0.5
6.0– 0.3
3.4– 0.3
2.54– 0.3
5.08– 0.5
1.0– 0.1
0.8– 0.1
1.5
+0 –0.4
3.0
+0.4 –0.2
0 to 0.4
1.1 max.
R0.5
R0.5
123
1:Base
2:Collector
3:Emitter
N Type Package (DS)
Note: Ordering can be made by the common rank (PQ rank h
FE
= 500 to 1500) in the rank classification.