1
Transistor
2SD1119
Silicon NPN epitaxial planer type
For low-frequency power amplification
n
Features
l Low collector to emitter saturation voltage V
CE(sat)
.
l Satisfactory operation performances at high efficiency with the
low-voltage power supply.
l Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
n
Absolute Maximum Ratings (Ta=25˚C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Base
2:Collector EIAJ:SC–62
3:Emitter Mini Power Type Package
4.5– 0.1
2.6
–
0.1
2.5
–
0.1
0.4max.
1.0
+0.1 –0.2
4.0
+0.25 –0.20
3.0– 0.15
1.5– 0.1
0.4– 0.08
0.5– 0.08
1.5– 0.1
0.4– 0.04
1.6– 0.2
45°
marking
321
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
*
T
j
T
stg
Ratings
40
25
7
5
3
1
150
–55 ~ +150
Unit
V
V
V
A
A
W
˚C
˚C
n
Electrical Characteristics (Ta=25˚C)
Parameter
Collector cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
V
CEO
V
EBO
h
FE1
*1
h
FE2
V
CE(sat)
f
T
C
ob
Conditions
V
CB
= 10V, I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 10m A, I
C
= 0
V
CE
= 2V, I
C
= 0.5A
*2
V
CE
= 2V, I
C
= 2A
*2
I
C
= 3A, I
B
= 0.1A
*2
V
CB
= 6V, I
E
= –50mA, f = 200MHz
V
CB
= 20V, I
E
= 0, f = 1MHz
min
25
7
230
150
typ
150
max
0.1
600
1
50
Unit
m A
V
V
V
MHz
pF
Marking symbol : T
*1
h
FE1
Rank classification
Rank Q R
h
FE1
230 ~ 380 340 ~ 600
Marking Symbol TQ TR
*
Printed circuit board: Copper foil area of 1cm
2
or more, and the board
thickness of 1.7mm for the collector portion
*2
Pulse measurement