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2SD1088

器件描述:SILICON NPN TRIPLE DIFFUSED TRANSISTOR(GENERAL DESCRIPTION)
器件厂商:WINGS [Wing Shing Computer Components]
文件大小:62.98KB,共1页
Sponsor by e络盟
器件资料摘要:
GENERAL DESCRIPTION
High voltage switching application.
Igniter application.
QUICK REFERENCE DATA
LIMITING VALUES
SYMBOL PARAMETER CONDITIONS MIN MAX UNIT
V
CESM
Collector-emitter voltage peak value V
BE
= 0V
-
300 V
V
CEO
Collector-emitter voltage (open base)
-
250 V
I
C
Collector current (DC)
-
6 A
I
CM
Collector current peak value
-
A
P
tot
Total power dissipation T
mb
25
-
30 W
V
CEsat
Collector-emitter saturation voltage
-
V
V
F
Diode forward voltage I
F
= 4.5A V
t
f
Fall time I
Csat
= 4.5A; f = 16KHz - s
SYMBOL PARAMETER CONDITIONS MIN MAX UNIT
V
CESM
Collector-emitter voltage peak value V
BE
= 0V - 300 V
V
CEO
Collector-emitter voltage (open base) - 250 V
V
EBO
Emitter-base oltage (open colloctor)
I
C
Collector current (DC) - 6 A
I
B
Base current (DC) - 1 A
P
tot
Total power dissipation Tmb 25 - 30 W
T
stg
Storage temperature -55 150
T
j
Junction temperature - 150
SYMBOL PARAMETER CONDITIONS MIN MAX UNIT
I
CBO
Collector-base cut-off current VCB =300V; V
E
=0 - 0.5 mA
I
EBO
Emitter-base cut-off current VEB =5V, Ic =0 - 0.5 mA
V
(BR)CEO
Collector-emitter breakdown voltage Ic

=0.5A, L=40mH 250 V
V
CEsat
Collector-emitter saturation voltages I
C
= 4A; I
B
= 0.04A - 2..0 V
h
FE1
DC current gain I
C
= 4A, V
CE
= 2V 200
h
FE2
DC current gain I
C
= 2A; V
CE
= 2V 2000 -
C
c
Collector capacitance at f = 1MHz V
CB
= 10V - pF
t
on
On times 1 us
t
s
Tum-off storage time 8 us
tf
Fall time 5 us
ELECTRICAL CHARACTERISTICS
TO-220
Wing Shing Computer Components Co., (H.K.)Ltd. Tel:(852)2341 9276 Fax:(852)2797 8153
Homepage: http://www.wingshing.com E-mail: wsccltd@hkstar.com