2SD1022
器件描述:Darlington Transistor(5A NPN)
文件大小:406.73KB,共8页
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器件资料摘要:
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
RATINGS
SHINDENGEN
OUTLINE DIMENSIONS
Unit : mm
Case : TO-220
Darlington Transistor
5A NPN
2SD1022
(T5L10)
●Absolute Maximum Ratings
Item Symbol Conditions Ratings Unit
Storage Temperature Tstg -55~+150 ℃
Junction Temperature Tj +150 ℃
Collector to Base Voltage VCBO 100 V
Collector to Emitter Voltage VCEO 100 V
Emitter to Base Voltage VEBO 7 V
Collector Current DC IC 5 A
Collector Current Peak ICP 8 A
Base Current DC IB 0.5 A
Base Current Peak IBP 1 A
Total Transistor Dissipation PT Tc = 25℃ 30 W
Mounting Torque TOR (Recommended torque : 0.3Nnull) 0.5 Nnull
●Electrical Characteristics (Tc=25℃)
Item Symbol Conditions Ratings Unit
Collector Cutoff Current ICBO VCB = 100V Max 0.1 mA
ICEO VCE = 100V Max 0.1
Emitter Cutoff Current IEBO VEB = 7V Max 5 mA
DC Current Gain h FE VCE = 3V, IC = 3A Min 1,500
Max 30,000
Collector to Emitter Saturation Voltage VCE(sat) IC = 3A Max 1.5 V
Base to Emitter Saturation Voltage VBE(sat) IB = 3mA Max 2.0 V
Thermal Resistance θjc Junction to case Max 4.17 ℃/W
Transition Frequency f T VCE = 10V, IC = 0.5A TYP 20 MHz
Turn on Time ton Max 2
IC = 5A
Storage Time ts IB1 = IB2 = 5mA Max 5 μs
RL = 5Ω
Fall Time tf VBB2 = 4V Max 3