2SD0946A
器件描述：For Low-Frequency Amplification
器件厂商：PANASONIC [Panasonic Semiconductor]
文件大小：68.46KB，共3页
Sponsor by e络盟器件资料摘要：
Power Transistors
1
Publication date: May 2003 SJD00164BED
2SD0946 (2SD946), 2SD0946A (2SD946A),
2SD0946B (2SD946B)
Silicon NPN epitaxial planar type darlington
For low-frequency amplification
■ Features
• Forward current transfer ratio h
FE
is designed high, which is appro-
priate to the driver circuit of motors and printer hammer.
• A shunt resistor is omitted from the driver.
■ Absolute Maximum Ratings T
a
= 25°C
■ Electrical Characteristics T
a
= 25°C ± 3°C
Unit: mm
1: Emitter
2: Collector
3: Base
TO-126B-A1 Package
Parameter Symbol Rating Unit
Collector-base voltage
2SD0946 V
CBO
30 V
(Emitter open)
2SD0946A 60
2SD0946B 100
Collector-emitter voltage
2SD0946 V
CEO
25 V
(Base open)
2SD0946A 50
2SD0946B 80
Emitter-base voltage (Collector open) V
EBO
5V
Collector current I
C
1A
Peak collector current I
CP
1.5 A
Collector power dissipation P
C
1.2 W
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage 2SD0946 V
CBO
I
C
= 100 µA, I
E
= 030 V
(Emitter open) 2SD0946A 60
2SD0946B 100
Collector-emitter voltage
2SD1263 V
CEO
I
C
= 1 mA, I
B
= 025V
(Base open)
2SD0946A 50
2SD0946B 80
Emitter-base voltage (Collector open) V
EBO
I
E
= 100 µA, I
C
= 05 V
Collector-base cutoff current (Emitter open) I
CBO
V
CB
= 25 V, I
E
= 0 0.1 µA
Emitter-base cutoff current (Collector open) I
EBO
V
EB
= 4 V, I
C
= 0 0.1 µA
Forward current transfer ratio
*
1, 2
h
FE
V
CE
= 10 V, I
C
= 1 A 4 000 40 000
Collector-emitter saturation voltage
*
1
V
CE(sat)
I
C
= 1 A, I
B
= 1 mA 1.8 V
Base-emitter saturation voltage
*
1
V
BE(sat)
I
C
= 1 A, I
B
= 1 mA 2.2 V
Transition frequency f
T
V
CB
= 10 V, I
E
= −50 mA, f = 200 MHz 150 MHz
8.0
+0.5
–0.1
1.9
±
0.1
3.05
±
0.1
3.8
±
0.3
11.0
±
0.5
16.0
±
1.0
3.2±0.2
0.75±0.1
0.5±0.1
2.3±0.2
4.6±0.2
0.5±0.1 1.76±0.1
123
φ 3.16±0.1
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*
1: Pulse measurement
*
2: Rank classification
Rank Q R S
h
FE
4 000 to 10 000 8 000 to 20 000 16 000 to 40 000
Note) The part numbers in the parenthesis show conventional part number.
Internal Connection
B
≈ 200 Ω
C
E
1
Publication date: May 2003 SJD00164BED
2SD0946 (2SD946), 2SD0946A (2SD946A),
2SD0946B (2SD946B)
Silicon NPN epitaxial planar type darlington
For low-frequency amplification
■ Features
• Forward current transfer ratio h
FE
is designed high, which is appro-
priate to the driver circuit of motors and printer hammer.
• A shunt resistor is omitted from the driver.
■ Absolute Maximum Ratings T
a
= 25°C
■ Electrical Characteristics T
a
= 25°C ± 3°C
Unit: mm
1: Emitter
2: Collector
3: Base
TO-126B-A1 Package
Parameter Symbol Rating Unit
Collector-base voltage
2SD0946 V
CBO
30 V
(Emitter open)
2SD0946A 60
2SD0946B 100
Collector-emitter voltage
2SD0946 V
CEO
25 V
(Base open)
2SD0946A 50
2SD0946B 80
Emitter-base voltage (Collector open) V
EBO
5V
Collector current I
C
1A
Peak collector current I
CP
1.5 A
Collector power dissipation P
C
1.2 W
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage 2SD0946 V
CBO
I
C
= 100 µA, I
E
= 030 V
(Emitter open) 2SD0946A 60
2SD0946B 100
Collector-emitter voltage
2SD1263 V
CEO
I
C
= 1 mA, I
B
= 025V
(Base open)
2SD0946A 50
2SD0946B 80
Emitter-base voltage (Collector open) V
EBO
I
E
= 100 µA, I
C
= 05 V
Collector-base cutoff current (Emitter open) I
CBO
V
CB
= 25 V, I
E
= 0 0.1 µA
Emitter-base cutoff current (Collector open) I
EBO
V
EB
= 4 V, I
C
= 0 0.1 µA
Forward current transfer ratio
*
1, 2
h
FE
V
CE
= 10 V, I
C
= 1 A 4 000 40 000
Collector-emitter saturation voltage
*
1
V
CE(sat)
I
C
= 1 A, I
B
= 1 mA 1.8 V
Base-emitter saturation voltage
*
1
V
BE(sat)
I
C
= 1 A, I
B
= 1 mA 2.2 V
Transition frequency f
T
V
CB
= 10 V, I
E
= −50 mA, f = 200 MHz 150 MHz
8.0
+0.5
–0.1
1.9
±
0.1
3.05
±
0.1
3.8
±
0.3
11.0
±
0.5
16.0
±
1.0
3.2±0.2
0.75±0.1
0.5±0.1
2.3±0.2
4.6±0.2
0.5±0.1 1.76±0.1
123
φ 3.16±0.1
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*
1: Pulse measurement
*
2: Rank classification
Rank Q R S
h
FE
4 000 to 10 000 8 000 to 20 000 16 000 to 40 000
Note) The part numbers in the parenthesis show conventional part number.
Internal Connection
B
≈ 200 Ω
C
E