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2SD0875

器件描述:For Low-Frequency Power Amplification
器件厂商:PANASONIC [Panasonic Semiconductor]
文件大小:71.81KB,共3页
Sponsor by e络盟
器件资料摘要:
Transistors
1
Publication date: November 2002 SJC00198CED
2SD0875 (2SD875)
Silicon NPN epitaxial planar type
For low-frequency power amplification
Complementary to 2SB0767 (2SB767)
■ Features
• Large collector power dissipation P
C
• High collector-emitter voltage (Base open) V
CEO
• Mini power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the magazine
packing.
■ Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
80 V
Collector-emitter voltage (Base open) V
CEO
80 V
Emitter-base voltage (Collector open) V
EBO
5V
Collector current I
C
0.5 A
Peak collector current I
CP
1A
Collector power dissipation
*
P
C
1W
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) V
CBO
I
C
= 10 µA, I
E
= 080V
Collector-emitter voltage (Base open) V
CEO
I
C
= 100 µA, I
B
=
Emitter-base voltage (Collector open) V
EBO
I
E
= 10 µA, I
C
= 05
Collector-base cutoff current (Emitter open) I
CBO
V
CB
= 20 V, I
E
= 0 0.1 µA
Forward current transfer ratio h
FE1
*
V
CE
= 10 V, I
C
= 150 mA 130 330 
h
FE2
V
CE
= 50 V, I
C
= 500 mA 50 100
Collector-emitter saturation voltage V
CE(sat)
I
C
= 300 mA, I
B
= 30 mA 0.2 0.4 V
Base-emitter saturation voltage V
BE(sat)
I
C
= 300 mA, I
B
= 30 mA 0.85 1.2 V
Transition frequency f
T
V
CB
= 10 V, I
E
= −50 mA, f = 200 MHz 120 MHz
Collector output capacitance C
ob
V
CB
= 10 V, I
E
= 0, f = 1 MHz 11 20 pF
(Common base, input open circuited)
■ Electrical Characteristics T
a
= 25°C ± 3°C
Unit: mm
4.5±0.1
3.0±0.15
45˚
2.6
±
0.1
0.4 max.
1.6±0.2 1.5±0.1
4.0
2.5
±
0.1

+0.25 –0.20
1.0
+0.1 –0.2
0.5±0.08 0.4±0.040.4±0.08
12
3
1.5±0.1

1: Base
2: Collector
3: Emitter
MiniP3-F1 Package
Rank R S
h
FE1
130 to 220 185 to 330
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*
: Rank classification
Note)
*
: Printed circuit board: Copper foil area of 1 cm
2
or more, and the
board thickness of 1.7 mm for the collector portion
Note) The part number in the parenthesis shows conventional part number.
Marking Symbol: X