2SC5886
2002-08-21 1
TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC5886

High-Speed Swtching Applications
DC-DC Converter Applications


Gb7G20 High DC current gain: h
FE
= 400 to 1000 (I
C
= 0.5 A)
Gb7G20 Low collector-emitter saturation: V
CE (sat)
= 0.22 V (max)
Gb7G20 High-speed switching: t
f
= 55 ns (typ.)

Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Collector-base voltage V
CBO
100 V
V
CEX
80
Collector-emitter voltage
V
CEO
50
V
Emitter-base voltage V
EBO
7 V
DC I
C
5
Collector current
Pulse I
CP
10
A
Base current I
B
0.5 A
Ta G3d 25°C 1
Collector power
dissipation
Tc G3d 25°C
Pc
20
W
Junction temperature T
j
150 °C
Storage temperature range T
stg
G2d55 to 150 °C

Electrical Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Collector cut-off current I
CBO
V
CB
G3d 100 V, I
E
G3d 0 Gbe Gbe 100 nA
Emitter cut-off current I
EBO
V
EB
G3d 7 V, I
C
G3d 0 Gbe Gbe 100 nA
Collector-emitter brakedown voltage V
(BR) CEO
I
C
G3d 10 mA, I
B
G3d 0 50 Gbe Gbe V
h
FE
(1)

V
CE
G3d 2 V, I
C
G3d 0.5 A 400 Gbe 1000
DC current gain
h
FE
(2)

V
CE
G3d 2 V, I
C
G3d 1.6 A 200 Gbe Gbe

Collector-emitter saturation voltage V
CE (sat)
I
C
G3d 1.6 A, I
B
G3d 32 mA Gbe Gbe 0.22 V
Base-emitter saturation voltage V
BE (sat)
I
C
G3d 1.6 A, I
B
G3d 32 mA Gbe Gbe 1.10 V
Rise time t
r
Gbe 63 Gbe
Storage time t
stg
Gbe 560 Gbe Switching time
Fall time t
f

See Figure 1 circuit diagram
V
CC
G7e
G2d
24 V, R
L
G3d 15 G57
I
B1
G3d 32 mA, I
B2
G3d G2d53 mA
Gbe 55 Gbe
ns


Unit: mm


JEDEC ―
JEITA SC-64
TOSHIBA 2-7J1A
Weight: 0.36 g (typ.)