DESCRIPTION
2SC5807 is a silicon NPN epitaxial Transistor.
It designed with high collector current and high collector dissipation.
FEATURE
● High collector current IC=5A
● Small collector to Emitter saturation voltage
　　 VCE(sat) =0.25V TYP. (@IC=4A,IB=100mA)
● High collector dissipation PC=500mW
APPLICATION
For storobe ,DC/DC convertor,power amplify apprication
〈 Transistor 〉
DEVELOPING 2SC5807
For Low Frequency Amplify Application
Silicon NPN Epitaxial Type
OUTLINE DRAWING Unit：ｍｍ
Note)
The dimension without tolerance represent central value.
MAXIMUM RATINGS (Ta=25 ℃ )
SYMBOL PARAMETER RATINGS UNIT
VCBO Collector to Base voltage 50 V
VEBO Emitter to Base voltage 6 V
VCEO Collector to Emitter voltage 20 V
I C Collector current 5
I CM Peak Collecter current 　 *1 10 A
Collector dissipation (Total 、 Ta=25 ℃ ) 0.5
PC Collector dissipation (Total 、 Ta=25 ℃ )　 *2 2 W
Tj Junction temperature ＋ 150 ℃
Tstg Storage temperature -55～＋ 150 ℃
*1　 Single Pulse 　 Pw=10msec
*2　 Pakkage mounted on 35mm ×50mm ×0.8mm ceramic board.
MARKING
Ａ Ｋ
Ｑ
TYPE NAME
LOT No. ｈ ＦＥ ITEM
TERMINAL CONNECTER
Ｅ: EMITTER
Ｃ: COLLECTOR
Ｂ: BASE
EIAJ : SC-62
JEDEC :
4.2 MAX
E C B
4.6 MAX
1.6
2.5
3.0
1.5
0.53
MAX
0.48 MAX
0.8 MIN
1.5
0.4
MARKING
ISAHAYA 　 ELECTRONICS　 CORPORATION