2SC5804
器件描述：SMALL-SIGNAL TRANSISTOR
器件厂商：ISAHAYA [Isahaya Electronics Corporation]
文件大小：46.52KB，共2页
Sponsor by e络盟器件资料摘要：
DESCRIPTION
2SC5804 is a super mini package resin sealed
silicon NPN epitaxial transistor,
It is designed for low frequency application.
Since it is a super-thin flat lead type package ,a high-density
mounting are possible.
Complementary with 2SC3052.
FEATURE
● Super-thin flat lead type package. t=0.45mm
● Excellent linearly of DC forward current gain.
● Low collector to emitter saturation voltage
VCE(sat)=0.3V max (@Ic=100mA/IB=10mA)
APPLICATION
For hybrid IC,small type machine low frequency voltage amplify
application.
※ It shows hFE classification in below table.
〈 SMALL-SIGNAL TRANSISTOR 〉
PRELIMINARY 2SC5804
Notics :This is not a final specification. FOR LOW FREQUENCY AMPLIFY APPLICATION
Some parametric limits are subject to change. SILICON NPN EPITAXIAL TYPE
OUTLINE DRAWING Unit：ｍｍ
MAXIMUM RATINGS （ Ta=25 ℃）
Symbol Parameter Ratings Unit
VCBO Collector to Base voltage 50 V
VCEO Collector to Emitter voltage 6 V
VEBO Emitter to Base voltage 50 V
I O Collector current 200 mA
Pc Collector dissipation 100 mW
Tj Junction temperature ＋ 125 ℃
Tstg Storage temperature -55～＋ 125 ℃
ELECTRICAL CHARACTERISTICS （ Ta=25 ℃）
Limits
Min Typ Max
Collector to Emitter Breakdown voltage V(BR)CEO IC=100μ A, R BE=∞ 50 ― ― V
Collector cut off current ICBO V CB =50V, I E=0mA - - 0.1 μ A
Emitter cut off current IEBO V EB=6V, I C=0mA - - 0.1 μ A
DC forward current gain hFE V CE=6V, I C=1mA 150 ※ 800 -
DC forward current gain hFE V CE=6V, I C=0.1mA 90 - - -
C to E saturation voltage VCE(sat) IC=100mA, I B=10mA - - 0.3 v
Gain bandwidth product fT V CE=6V, I E=-10mA - 200 - MHz
Collector output capacitance Cob V CB =6V, I E=0mA,f=1MHz - 2.5 - pF
Noise figure NF V CE=6V, I E=-0.1mA,f=1kHz,RG=2k Ω - - 15 dB
JEITA ：
TERMINAL CONNECTER
① ： BASE
② ： EMITTER
③ ： COLLECTOR
0.45
0.25
0.20.80.2
0.4
0.4
0.81.2
①
② ③
ISAHAYA ELECTRONICS CORPORATION
Item E F G
hFE 150～300 250～500 400～800
Abbrivation LE LF LG
2SC5804 is a super mini package resin sealed
silicon NPN epitaxial transistor,
It is designed for low frequency application.
Since it is a super-thin flat lead type package ,a high-density
mounting are possible.
Complementary with 2SC3052.
FEATURE
● Super-thin flat lead type package. t=0.45mm
● Excellent linearly of DC forward current gain.
● Low collector to emitter saturation voltage
VCE(sat)=0.3V max (@Ic=100mA/IB=10mA)
APPLICATION
For hybrid IC,small type machine low frequency voltage amplify
application.
※ It shows hFE classification in below table.
〈 SMALL-SIGNAL TRANSISTOR 〉
PRELIMINARY 2SC5804
Notics :This is not a final specification. FOR LOW FREQUENCY AMPLIFY APPLICATION
Some parametric limits are subject to change. SILICON NPN EPITAXIAL TYPE
OUTLINE DRAWING Unit：ｍｍ
MAXIMUM RATINGS （ Ta=25 ℃）
Symbol Parameter Ratings Unit
VCBO Collector to Base voltage 50 V
VCEO Collector to Emitter voltage 6 V
VEBO Emitter to Base voltage 50 V
I O Collector current 200 mA
Pc Collector dissipation 100 mW
Tj Junction temperature ＋ 125 ℃
Tstg Storage temperature -55～＋ 125 ℃
ELECTRICAL CHARACTERISTICS （ Ta=25 ℃）
Limits
Min Typ Max
Collector to Emitter Breakdown voltage V(BR)CEO IC=100μ A, R BE=∞ 50 ― ― V
Collector cut off current ICBO V CB =50V, I E=0mA - - 0.1 μ A
Emitter cut off current IEBO V EB=6V, I C=0mA - - 0.1 μ A
DC forward current gain hFE V CE=6V, I C=1mA 150 ※ 800 -
DC forward current gain hFE V CE=6V, I C=0.1mA 90 - - -
C to E saturation voltage VCE(sat) IC=100mA, I B=10mA - - 0.3 v
Gain bandwidth product fT V CE=6V, I E=-10mA - 200 - MHz
Collector output capacitance Cob V CB =6V, I E=0mA,f=1MHz - 2.5 - pF
Noise figure NF V CE=6V, I E=-0.1mA,f=1kHz,RG=2k Ω - - 15 dB
JEITA ：
TERMINAL CONNECTER
① ： BASE
② ： EMITTER
③ ： COLLECTOR
0.45
0.25
0.20.80.2
0.4
0.4
0.81.2
①
② ③
ISAHAYA ELECTRONICS CORPORATION
Item E F G
hFE 150～300 250～500 400～800
Abbrivation LE LF LG