2SC5748
2001-11-27 1
TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type
2SC5748

Horizontal Deflection Output for HDTV&Digital TV.


Gb7G20 High voltage: V
CBO
= 2000 V
Gb7G20 Low saturation voltage: V
CE (sat)
= 3 V (max)
Gb7G20 High speed: t
f
= 0.15 µs (typ.)


Maximum Ratings (Tc G3d 25°C)
Characteristics Symbol Rating Unit
Collector-base voltage V
CBO
2000 V
Collector-emitter voltage V
CEO
900 V
Emitter-base voltage V
EBO
5 V
DC I
C
16
Collector current
Pulse I
CP
32
A
Base current I
B
8 A
Collector power dissipation P
C
210 W
Junction temperature T
j
150 °C
Storage temperature range T
stg
G2d55~150 °C


Electrical Characteristics (Tc G3d 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Collector cut-off current I
CBO
V
CB
G3d 2000 V, I
E
G3d 0 Gbe Gbe 1 mA
Emitter cut-off current I
EBO
V
EB
G3d 5 V, I
C
G3d 0 Gbe Gbe 100 G6dA
Collector-emitter breakdown voltage V
(BR) CEO
I
C
G3d 10 mA, I
B
G3d 0 900 Gbe Gbe V
h
FE
(1)

V
CE
G3d 5 V, I
C
G3d 2 A 20 Gbe 55
h
FE
(2)

V
CE
G3d 5 V, I
C
G3d 8 A 7 Gbe 12.5DC current gain
h
FE
(3) V
CE
G3d 5 V, I
C
G3d 12 A 4.8 G20 7.5
Gbe
Collector-emitter saturation voltage V
CE (sat)
I
C
G3d 12 A, I
B
G3d 3 A Gbe Gbe 3 V
Base-emitter saturation voltage V
BE (sat)
I
C
G3d 12 A, I
B
G3d 3 A Gbe Gbe 1.3 V
Transition frequency f
T
V
CE
G3d 10 V, I
C
G3d 0.1 A GbeG20 2 Gbe MHz
Collector output capacitance C
ob
V
CB
G3d 10 V, I
E
G3d 0, f G3d 1 MHz GbeG20 310 GbeG20 pF
Storage time t
stg
Gbe 4.0 5.0
Switching time
Fall time t
f

I
CP
G3d 8 A, I
B1 (end)
G3d 1.2 A,
f
H
G3d 32 kHz
Gbe 0.15 0.35
G6ds






Unit: mm


JEDEC ―
JEITA ―
TOSHIBA 2-21F2A
Weight: 9.75 g (typ.)