2SC5646
器件描述：UHF to S Band Low-Noise Amplifier andOSC Applications
器件厂商：SANYO [Sanyo Semicon Device]
文件大小：31.71KB，共6页
Sponsor by e络盟器件资料摘要：
2SC5646
No.6606-1/6
UHF to S Band Low-Noise Amplifier
and OSC Applications
Features
•
Low-noise use : NF=1.5dB typ (f=2GHz).
• High cut-off frequency : f
T
=10GHz typ (V
CE
=1V).
: f
T
=12.5GHz typ (V
CE
=3V).
• Low operating voltage.
• High gain :S21e
2
=9.5dB typ (f=2GHz).
• Ultraminiature and thin flat leadless package
(1.4mm5 0.8mm5 0.6mm).
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage V
CBO
9V
Collector-to-Emitter Voltage V
CEO
4V
Emitter-to-Base Voltage V
EBO
2V
Collector Current I
C
30 mA
Collector Dissipation P
C
100 mW
Junction Temperature Tj 150 °C
Storage Temperature Tstg --55 to +150 °C
Electrical Characteristics at Ta=25°C
Ratings
Parameter Symbol Conditions
min typ max
Unit
Collector Cutoff Current I
CBO
V
CB
=5V, I
E
=0 1.0 µA
Emitter Cutoff Current I
EBO
V
EB
=1V, I
C
=0 10 µA
DC Current Gain h
FE
V
CE
=1V, I
C
=5mA 100 160
Gain-Bandwidth Product
f
T
1V
CE
=1V, I
C
=5mA 8 10 GHz
f
T
2V
CE
=3V, I
C
=15mA 12.5 GHz
Output Capacitance Cob V
CB
=1V, f=1MHz 0.55 0.7 pF
Reverse Transfer Capacitance Cre V
CB
=1V, f=1MHz 0.4 pF
Forward Transfer Gain
S21e
2
1V
CE
=1V, I
C
=5mA, f=2GHz 8 9.5 dB
S21e
2
2V
CE
=3V, I
C
=15mA, f=2GHz 10.5 dB
Noise Figure NF V
CE
=1V, I
C
=3mA, f=2GHz 1.5 2.3 dB
Marking : NF
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN6606
2SC5646
Package Dimensions
unit : mm
2159
[2SC5646]
72100 TS IM TA-2972
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Epitaxial Planar Silicon Transistor
1 : Base
2 : Emitter
3 : Collector
SANYO : SSFP
0.6
0.25
0.2
1.4
0.45
1
3
2
0.3
1.40.8
0.3
0.1
No.6606-1/6
UHF to S Band Low-Noise Amplifier
and OSC Applications
Features
•
Low-noise use : NF=1.5dB typ (f=2GHz).
• High cut-off frequency : f
T
=10GHz typ (V
CE
=1V).
: f
T
=12.5GHz typ (V
CE
=3V).
• Low operating voltage.
• High gain :S21e
2
=9.5dB typ (f=2GHz).
• Ultraminiature and thin flat leadless package
(1.4mm5 0.8mm5 0.6mm).
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage V
CBO
9V
Collector-to-Emitter Voltage V
CEO
4V
Emitter-to-Base Voltage V
EBO
2V
Collector Current I
C
30 mA
Collector Dissipation P
C
100 mW
Junction Temperature Tj 150 °C
Storage Temperature Tstg --55 to +150 °C
Electrical Characteristics at Ta=25°C
Ratings
Parameter Symbol Conditions
min typ max
Unit
Collector Cutoff Current I
CBO
V
CB
=5V, I
E
=0 1.0 µA
Emitter Cutoff Current I
EBO
V
EB
=1V, I
C
=0 10 µA
DC Current Gain h
FE
V
CE
=1V, I
C
=5mA 100 160
Gain-Bandwidth Product
f
T
1V
CE
=1V, I
C
=5mA 8 10 GHz
f
T
2V
CE
=3V, I
C
=15mA 12.5 GHz
Output Capacitance Cob V
CB
=1V, f=1MHz 0.55 0.7 pF
Reverse Transfer Capacitance Cre V
CB
=1V, f=1MHz 0.4 pF
Forward Transfer Gain
S21e
2
1V
CE
=1V, I
C
=5mA, f=2GHz 8 9.5 dB
S21e
2
2V
CE
=3V, I
C
=15mA, f=2GHz 10.5 dB
Noise Figure NF V
CE
=1V, I
C
=3mA, f=2GHz 1.5 2.3 dB
Marking : NF
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN6606
2SC5646
Package Dimensions
unit : mm
2159
[2SC5646]
72100 TS IM TA-2972
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Epitaxial Planar Silicon Transistor
1 : Base
2 : Emitter
3 : Collector
SANYO : SSFP
0.6
0.25
0.2
1.4
0.45
1
3
2
0.3
1.40.8
0.3
0.1