Transistors
1
2SC5654
Silicon NPN epitaxial planer type
For DC-DC converter
Complementary to 2SA2028
a73 Features
• Low collector to emitter saturation voltage V
CE(sat)
• S-mini type package, allowing downsizing and thinning of the
equipment and automatic insertion through the tape packing
a73 Absolute Maximum Ratings T
a
= 25°C
Unit: mm
Parameter Symbol Rating Unit
Collector to base voltage V
CBO
20 V
Collector to emitter voltage V
CEO
20 V
Emitter to base voltage V
EBO
5V
Peak collector current I
CP
1A
Collector current I
C
3A
Collector power dissipation P
C
150 mW
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector to base voltage V
CBO
I
C
= 10 µA, I
E
= 020 V
Collector to emitter voltage V
CEO
I
C
= 1 mA, I
B
=
Emitter to base voltage V
EBO
I
E
= 10 µA, I
C
= 05
Forward current transfer ratio h
FE
V
CE
= 2 V, I
C
= 100 mA 160 560
Collector to emitter saturation voltage V
CE(sat)
I
C
= 200 mA, I
B
= 10 mA 60 100 mV
Collector output capacitance C
ob
V
CB
= 10 V, I
E
= 0, f = 1 MHz 12 30 pF
Transition frequency f
T
V
CB
= 10 V, I
E
= −10 mA, f = 200 MHz 180 MHz
a73 Electrical Characteristics T
a
= 25°C ± 3°C
Marking Symbol: 2S
1: Base
2: Emitter
3: Collector
S Mini Type Package (3-pin)
2.1
±0.1
1.3±0.1
0.3
+0.1
–0.0
2.0±0.2
1.25
±0.10
(0.425)
1
3
2
(0.65) (0.65)
0.2
±0.1
0.9
±0.1
0 to 0.1
0.9
+0.2 –0.1
0.15
+0.10
–0.05
5˚
10˚