Transistors
1
2SC5580
Silicon NPN epitaxial planer type
For high-frequency oscillation / switching
a73 Features
• High transition frequency f
T
• S-mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
a73 Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
Collector to base voltage V
CBO
15 V
Collector to emitter voltage V
CEO
8V
Emitter to base voltage V
EBO
3V
Collector current I
C
50 mA
Collector power dissipation P
C
150 mW
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 to +150 °C
Marking Symbol: 3R
Unit: mm
2.1
±0.1
1.3±0.1
0.3
+0.1
–0.0
2.0±0.2
1.25
±0.10
(0.425)
1
3
2
(0.65) (0.65)
0.2
±0.1
0.9
±0.1
0 to 0.1
0.9
+0.2 –0.1
0.15
+0.10
–0.05
5
°
10°
Parameter Symbol Conditions Min Typ Max Unit
Emitter cutoff current I
EBO
V
EB
= 2 V, I
C
= 02µA
Collector to base voltage V
CBO
I
C
= 100 µA, I
E
= 015 V
Forward current transfer ratio h
FE
V
CE
= 4 V, I
C
= 2 mA 100 350
h
FE
ratio h
FE(RATIO)
V
CE
= 4 V, I
C
= 100 µA/2 mA 0.6 1.5 dB
Collector to emitter saturation voltage V
CE(sat)
I
C
= 20 mA, I
B
= 4 mA 0.5 V
Transition frequency f
T
V
CE
= 5 V, I
C
= 15 mA, f = 200 MHz 0.6 1.1 GHz
Collector output capacitance C
ob
V
CB
= 10 V, I
E
= 0, f = 1 MHz 1.2 1.6 pF
a73 Electrical Characteristics T
a
= 25°C ± 3°C
1: Base
2: Emitter EIAJ: SC-70
3: Collector S-Mini Type Package