PRELIMINARY DATA SHEET
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confirm that this is the latest version.
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Document No. P14658EJ2V0DS00 (2nd edition)
Date Published April 2000 NS CP(K)
Printed in Japan
NPN SILICON RF TRANSISTOR
2SC5606
NPN SILICON RF TRANSISTOR FOR
LOW NOISE · HIGH-GAIN AMPLIFICATION
3-PIN ULTRA SUPER MINIMOLD
© 1999, 2000
The mark  shows major revised points.
FEATURES
• Suitable for high-frequency oscillation
•fT = 25 GHz technology adopted
• 3-pin ultra super minimold
ORDERING INFORMATION
Part Number Quantity Supplying Form
2SC5606 50 pcs (Non reel) • 8 mm wide embossed taping
2SC5606-T1 3 kpcs/reel • Pin 3 (collector) face the perforation side of the tape
Remark To order evaluation samples, consult your NEC sales representative (Unit sample quantity is 50 pcs).
ABSOLUTE MAXIMUM RATINGS (TA = +25 °C)
Parameter Symbol Ratings Unit
Collector to Base Voltage VCBO 15 V
Collector to Emitter Voltage VCEO 3.3 V
Emitter to Base Voltage VEBO 1.5 V
Collector Current IC 35 mA
Total Power Dissipation Ptot
Note
115 mW
Junction Temperature Tj 150 °C
Storage Temperature Tstg −65 to +150 °C
Note Mounted on 1.08 cm
2
× 1.0 mm (t) glass epoxy substrate
Because this product uses high-frequency technology, avoid excessive static electricity, etc.