Power Transistors
1
2SC5584
Silicon NPN triple diffusion mesa type
For horizontal deflection output
a73 Features
• High breakdown voltage, and high reliability through the use of a
glass passivation layer
• High-speed switching
• Wide area of safe operation (ASO)
a73 Absolute Maximum Ratings T
C
= 25°C
Unit: mm
Parameter Symbol Rating Unit
Collector to base voltage V
CBO
1 500 V
Collector to emitter voltage V
CES
1 500 V
V
CEO
600 V
Emitter to base voltage V
EBO
7V
Peak collector current I
CP
30 A
Collector current I
C
20 A
Base current I
B
8 A
Collector power
T
C
= 25°CP
C
150 W
dissipation
T
a
= 25°C 3.5
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 to +150 °C
a73 Electrical Characteristics T
C
= 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Collector cutoff current I
CBO
V
CB
= 1 000 V, I
E
= 050µA
V
CB
= 1 500 V, I
E
= 01m
Emitter cutoff current I
EBO
V
EB
= 7 V, I
C
= µA
Forward current transfer ratio h
FE
V
CE
= 5 V, I
C
= 10 A 7 14
Collector to emitter saturation voltage V
CE(sat)
I
C
= 10 A, I
B
= 2.5 A 3 V
Base to emitter saturation voltage V
BE(sat)
I
C
= 10 A, I
B
= 2.5 A 1.5 V
Transition frequency f
T
V
CE
= 10 V, I
C
= 0.1 A, f = 0.5 MHz 3 MHz
Storage time t
stg
I
C
= 10 A, Resistance loaded 2.7 µs
Fall time t
f
I
B1
= 2.5 A, I
B2
= −5.0 A 0.2 µs
20.0±0.5
2.0±0.3
3.0±0.3
1.0±0.2
5.45±0.3
10.9±0.5
123
26.0
±
0.5
(10.0)
(2.5)
Solder Dip
(6.0)
(4.0)
(2.0)
(1.5)
(1.5)
20.0
±
0.5
5.0±0.3
φ 3.3±0.2
(1.5)
2.7±0.3
0.6±0.2
(3.0)
(3.0)
(2.0)
1: Base
2: Collector
3: Emitter
TOP-3L Package
Internal Connection
B
C
E
Marking Symbol: C5584