2SC5578
器件描述：Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications
器件厂商：SANYO [Sanyo Semicon Device]
文件大小：40.25KB，共4页
Sponsor by e络盟器件资料摘要：
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Triple Diffused Planar Silicon Transistor
Ultrahigh-Definition CRT Display
Horizontal Deflection Output Applications
Ordering number:ENN6297
2SC5578
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
10700TS (KOTO) TA-2546 No.6297–1/4
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Package Dimensions
unit:mm
2048B
[2SC5578]
Features
· High speed.
· High breakdown voltage (V
CBO
=1600V).
· High reliability (Adoption of HVP process).
· Adoption of MBIT process.
˚C
˚C
Electrical Characteristics at Ta = 25˚C
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-3PBL
Tc=25˚C
Continued on next page.
20.0
1.2
2.0
3.4
3.3
0.6
5.0
1.0
2.0
20.7
26.0
123
5.455.45
2.8
6.0
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
OBC
0061V
egatloVrettimE-ot-rotcello
OEC
008V
egatloVesaB-ot-rettimEV
OBE
6V
tnerruCrotcelloCI
C
51A
)esluP(tnerruCrotcello
PC
53A
noitapissiDrotcelloCP
C
5.3W
041W
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
retemaraPlobmySsnoitidnoC
sgnitaR
tinU
nimpytxam
tnerruCffotuCrotcelloC I
SEC
V
EC
R,V0061=
EB
0=0.1Am
egatloVniatsuSrettimE-ot-rotcelloCV
)sus(OEC
I
C
I,Am001=
B
0 08V
tnerruCffotuCrettimEI
OBE
V
BE
I,V4=
C
0 .1Am
tnerruCffotuCrotcelloC I
OBC
V
BC
I,V008=
E
0 1Aµ
niaGtnerruCCD
h
EF
1V
EC
I,V5=
C
A0.1= 5103
h
EF
2V
EC
I,V5=
C
A11= 47
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Triple Diffused Planar Silicon Transistor
Ultrahigh-Definition CRT Display
Horizontal Deflection Output Applications
Ordering number:ENN6297
2SC5578
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
10700TS (KOTO) TA-2546 No.6297–1/4
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Package Dimensions
unit:mm
2048B
[2SC5578]
Features
· High speed.
· High breakdown voltage (V
CBO
=1600V).
· High reliability (Adoption of HVP process).
· Adoption of MBIT process.
˚C
˚C
Electrical Characteristics at Ta = 25˚C
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-3PBL
Tc=25˚C
Continued on next page.
20.0
1.2
2.0
3.4
3.3
0.6
5.0
1.0
2.0
20.7
26.0
123
5.455.45
2.8
6.0
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
OBC
0061V
egatloVrettimE-ot-rotcello
OEC
008V
egatloVesaB-ot-rettimEV
OBE
6V
tnerruCrotcelloCI
C
51A
)esluP(tnerruCrotcello
PC
53A
noitapissiDrotcelloCP
C
5.3W
041W
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
retemaraPlobmySsnoitidnoC
sgnitaR
tinU
nimpytxam
tnerruCffotuCrotcelloC I
SEC
V
EC
R,V0061=
EB
0=0.1Am
egatloVniatsuSrettimE-ot-rotcelloCV
)sus(OEC
I
C
I,Am001=
B
0 08V
tnerruCffotuCrettimEI
OBE
V
BE
I,V4=
C
0 .1Am
tnerruCffotuCrotcelloC I
OBC
V
BC
I,V008=
E
0 1Aµ
niaGtnerruCCD
h
EF
1V
EC
I,V5=
C
A0.1= 5103
h
EF
2V
EC
I,V5=
C
A11= 47