2SC5551
器件描述：High-Frequency Medium-Output Amplifier Applications
器件厂商：SANYO [Sanyo Semicon Device]
文件大小：43.33KB，共5页
Sponsor by e络盟器件资料摘要：
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Epitaxial Planar Silicon Transistor
High-Frequency Medium-Output
Amplifier Applications
Ordering number:ENN6328
2SC5551
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
21000TS (KOTO) TA-2665 No.6328–1/5
4.5
1.6
0.50.4
1.5
1.0
2.5
4.25max
3.0
1.5
0.4
0.75
3 2 1
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Package Dimensions
unit:mm
2038A
[2SC5551]
Features
· High f
T
: (f
T
=3.5GHz typ).
· Large current : (I
C
=300mA).
· Large allowable collector dissipation (1.3W max).
˚C
˚C
Electrical Characteristics at Ta = 25˚C
1 : Base
2 : Collector
3 : Emitter
SANYO : PCP
(Bottom view)
Continued on next page.
* : The 2SC5551 is classified by 50mA h
FE
as follows :
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
OBC
04V
egatloVrettimE-ot-rotcello
OEC
03V
egatloVesaB-ot-rettimEV
OBE
2V
tnerruCrotcelloCI
C
003Am
)eslup(tnerruCrotcello
PC
006Am
noitapissiDrotcelloCP
C
mm052(draobcimarecanodetnuoM
2
· )mm8.03.1W
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
retemaraPlobmySsnoitidnoC
sgnitaR
tinU
nimpytxam
tnerruCffotuCrotcelloCI
OBC
V
BC
I,V02=
E
0=0.1Aµ
tnerruCffotuCrettimEI
OBE
V
BE
I,V1=
C
0 .5Aµ
niaGtnerruCCD
h
EF
1V
EC
I,V5=
C
Am05= 09072
h
EF
2V
EC
I,V5=
C
Am003= 02
gnikraMBE
knaREF
h
EF
081ot09072ot531
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Epitaxial Planar Silicon Transistor
High-Frequency Medium-Output
Amplifier Applications
Ordering number:ENN6328
2SC5551
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
21000TS (KOTO) TA-2665 No.6328–1/5
4.5
1.6
0.50.4
1.5
1.0
2.5
4.25max
3.0
1.5
0.4
0.75
3 2 1
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Package Dimensions
unit:mm
2038A
[2SC5551]
Features
· High f
T
: (f
T
=3.5GHz typ).
· Large current : (I
C
=300mA).
· Large allowable collector dissipation (1.3W max).
˚C
˚C
Electrical Characteristics at Ta = 25˚C
1 : Base
2 : Collector
3 : Emitter
SANYO : PCP
(Bottom view)
Continued on next page.
* : The 2SC5551 is classified by 50mA h
FE
as follows :
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
OBC
04V
egatloVrettimE-ot-rotcello
OEC
03V
egatloVesaB-ot-rettimEV
OBE
2V
tnerruCrotcelloCI
C
003Am
)eslup(tnerruCrotcello
PC
006Am
noitapissiDrotcelloCP
C
mm052(draobcimarecanodetnuoM
2
· )mm8.03.1W
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
retemaraPlobmySsnoitidnoC
sgnitaR
tinU
nimpytxam
tnerruCffotuCrotcelloCI
OBC
V
BC
I,V02=
E
0=0.1Aµ
tnerruCffotuCrettimEI
OBE
V
BE
I,V1=
C
0 .5Aµ
niaGtnerruCCD
h
EF
1V
EC
I,V5=
C
Am05= 09072
h
EF
2V
EC
I,V5=
C
Am003= 02
gnikraMBE
knaREF
h
EF
081ot09072ot531