Power Transistors
1
2SC5553
Silicon NPN triple diffusion mesa type
For horizontal deflection output
a73 Features
• High breakdown voltage, and high reliability through the use of a
glass passivation layer
• High-speed switching
• Wide area of safe operation (ASO)
a73 Absolute Maximum Ratings T
C
= 25°C
Unit: mm
Parameter Symbol Rating Unit
Collector to base voltage V
CBO
1 700 V
Collector to emitter voltage V
CES
1 700 V
V
CEO
600 V
Emitter to base voltage V
EBO
7V
Peak collector current I
CP
30 A
Collector current I
C
22 A
Base current I
B
11 A
Collector power
T
C
= 25°CP
C
70 W
dissipation
T
a
= 25°C 3.5
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 to +150 °C
a73 Electrical Characteristics T
C
= 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Collector cutoff current I
CBO
V
CB
= 1 000 V, I
E
= 050µA
V
CB
= 1 700 V, I
E
= 01m
Emitter cutoff current I
EBO
V
EB
= 7 V, I
C
= µA
Forward current transfer ratio h
FE
V
CE
= 5 V, I
C
= 11 A 6 12
Collector to emitter saturation voltage V
CE(sat)
I
C
= 11 A, I
B
= 2.75 A 3 V
Base to emitter saturation voltage V
BE(sat)
I
C
= 11 A, I
B
= 2.75 A 1.5 V
Transition frequency f
T
V
CE
= 10 V, I
C
= 0.1 A, f = 0.5 MHz 3 MHz
Storage time t
stg
I
C
= 11 A, Resistance loaded 3.0 µs
Fall time t
f
I
B1
= 2.75 A, I
B2
= −5.5 A 0.2 µs
15.5±0.5 3.0±0.3
(4.0)
2.0±0.2
1.1±0.1
5.45±0.3
0.7±0.1
5°
5°
5°
5°
5°
10.9±0.5
1
5°
23
(10.0)
(1.2)
(2.0)
Solder Dip
3.3
±0.3
5.5
±0.3
(2.0)
26.5
±0.5
(23.4)
22.0
±0.5
18.6
±0.5
(2.0)
φ 3.2±0.1
(4.5)
1: Base
2: Collector
3: Emitter
TOP-3E Package
Internal Connection
B
C
E
Marking Symbol: C5553