2SC5540
器件描述：UHF to S Band Low-Noise Amplifier and OSC Applications
器件厂商：SANYO [Sanyo Semicon Device]
文件大小：30.9KB，共3页
Sponsor by e络盟器件资料摘要：
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Epitaxial Planar Silicon Transistor
UHF to S Band Low-Noise Amplifier
and OSC Applications
Ordering number:ENN6280
2SC5540
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
10700TS (KOTO) TA-1682 No.6280–1/3
0.6
0.25
0.2
1.4
0.45
1
3
2
0.3
1.40.8
0.3
0.1
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Package Dimensions
unit:mm
2159
[2SC5540]
Features
· High cutoff frequency : f
T
=10GHz typ.
· High gain : ‰ S21e‰
2
=13dB typ (f=1GHz).
· Low noise : NF=1.3dB typ (f=1GHz).
· Small Cob : Cob=0.4pF typ.
· Ultrasmall, slim flat-lead package.
(1.4mm · 0.8mm · 0.6mm)
˚C
˚C
Electrical Characteristics at Ta = 25˚C
1 : Base
2 : Emitter
3 : Collector
SANYO : SSFP
Marking : HN
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
OBC
61V
egatloVrettimE-ot-rotcello
OEC
8V
egatloVesaB-ot-rettimEV
OBE
5.1V
tnerruCrotcelloCI
C
02Am
noitapissiDrotcelloCP
C
001Wm
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
retemaraPlobmySsnoitidnoC
sgnitaR
tinU
nimpytxam
tnerruCffotuCrotcelloCI
OBC
V
BC
I,V01=
E
0=0.1Aµ
tnerruCffotuCrettimEI
OBE
V
BE
I,V1=
C
0 1Aµ
niaGtnerruCCD h
EF
V
EC
I,V5=
C
Am4= 09002
tcudorPhtdiwdnaB-niaG f
T
V
EC
I,V5=
C
Am4= 01zHG
ecnaticapaCtuptuOboCV
BC
zHM1=f,V01= 4.07.0Fp
niaGrefsnarTdrawroF|e12S|
2
V
EC
I,V5=
C
zHG1=f,Am7= 0131Bd
erugiFesioNFN V
EC
I,V5=
C
zHG1=f,Am4= 3.18.2Bd
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Epitaxial Planar Silicon Transistor
UHF to S Band Low-Noise Amplifier
and OSC Applications
Ordering number:ENN6280
2SC5540
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
10700TS (KOTO) TA-1682 No.6280–1/3
0.6
0.25
0.2
1.4
0.45
1
3
2
0.3
1.40.8
0.3
0.1
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Package Dimensions
unit:mm
2159
[2SC5540]
Features
· High cutoff frequency : f
T
=10GHz typ.
· High gain : ‰ S21e‰
2
=13dB typ (f=1GHz).
· Low noise : NF=1.3dB typ (f=1GHz).
· Small Cob : Cob=0.4pF typ.
· Ultrasmall, slim flat-lead package.
(1.4mm · 0.8mm · 0.6mm)
˚C
˚C
Electrical Characteristics at Ta = 25˚C
1 : Base
2 : Emitter
3 : Collector
SANYO : SSFP
Marking : HN
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
OBC
61V
egatloVrettimE-ot-rotcello
OEC
8V
egatloVesaB-ot-rettimEV
OBE
5.1V
tnerruCrotcelloCI
C
02Am
noitapissiDrotcelloCP
C
001Wm
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
retemaraPlobmySsnoitidnoC
sgnitaR
tinU
nimpytxam
tnerruCffotuCrotcelloCI
OBC
V
BC
I,V01=
E
0=0.1Aµ
tnerruCffotuCrettimEI
OBE
V
BE
I,V1=
C
0 1Aµ
niaGtnerruCCD h
EF
V
EC
I,V5=
C
Am4= 09002
tcudorPhtdiwdnaB-niaG f
T
V
EC
I,V5=
C
Am4= 01zHG
ecnaticapaCtuptuOboCV
BC
zHM1=f,V01= 4.07.0Fp
niaGrefsnarTdrawroF|e12S|
2
V
EC
I,V5=
C
zHG1=f,Am7= 0131Bd
erugiFesioNFN V
EC
I,V5=
C
zHG1=f,Am4= 3.18.2Bd