1
Power Transistors
2SC5518
Silicon NPN triple diffusion mesa type
For horizontal deflection output
n
Features
l High breakdown voltage, and high reliability through the use of a
glass passivation layer
l High-speed switching
l Wide area of safe operation (ASO)
n
Absolute Maximum Ratings (T
C
=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CES
V
EBO
I
CP
I
C
I
B
P
C
T
j
T
stg
Ratings
1500
1500
5
14
7
3.5
40
3
150
–55 to +150
Unit
V
V
V
A
A
A
W
˚C
˚C
T
C
=25 C
Ta=25 C
n
Electrical Characteristics (T
C
=25˚C)
Parameter
Collector cutoff current
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Storage time
Fall time
Diode forward voltage
Symbol
I
CBO
V
EBO
h
FE
V
CE(sat)
V
BE(sat)
f
T
t
stg
t
f
V
F
Conditions
V
CB
= 1000V, I
E
= 0
V
CB
= 1500V, I
E
= 0
I
E
= 500mA, I
C
= 0
V
CE
= 5V, I
C
= 5A
I
C
= 5A, I
B
= 1A
I
C
= 5A, I
B
= 1A
V
CE
= 10V, I
C
= 0.1A, f = 0.5MHz
I
C
= 5A, I
B1
= 1A, I
B2
= –2A
I
F
= 5A
min
5
5
typ
3
max
50
1
10
3
1.5
5.0
0.5
–2
Unit
m A
mA
V
V
V
MHz
m s
m s
V
Unit: mm
1:Base
2:Collector
3:Emitter
TOP–3E Full Pack Package
15.5– 0.5
26.5
–
0.5
22.0
–
0.5
23.4
18.6
–
0.5
3.3
–
0.3
5.5
–
0.3
2.0
0.7
–
0.1
2.0
2
.0
1.2
10.0
3.0– 0.3
f 3.2– 0.1
4.5
5.45– 0.3
123
5.45– 0.3
1.1– 0.1
2.0– 0.2
4.0
5° 5°
5°
5°
5°
5°
0.7– 0.1