2SC5537
器件描述：Low-Voltage, Low-Current High-frequency Amplifier Applications
器件厂商：SANYO [Sanyo Semicon Device]
文件大小：32.45KB，共3页
Sponsor by e络盟器件资料摘要：
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Epitaxial Planar Silicon Transistor
Low-Voltage, Low-Current
High-frequency Amplifier Applications
Ordering number:ENN6340
2SC5537
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
10700TS (KOTO) TA-2425 No.6340–1/3
0.6
0.25
0.2
1.4
0.45
1
3
2
0.3
1.40.8
0.3
0.1
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Package Dimensions
unit:mm
2159
[2SC5537]
Features
· Low voltage, low current operation : f
T
=5GHz typ.
(V
CE
=1V, I
C
=1mA) : ‰ S21e‰
2
=7dB typ (f=1GHz).
: NF=2.6dB typ (f=1GHz).
· Ultrasmall, slim flat-lead package.
(1.4mm · 0.8mm · 0.6mm)
˚C
˚C
Electrical Characteristics at Ta = 25˚C
1 : Base
2 : Emitter
3 : Collector
SANYO : SSFP
Marking : CN
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
OBC
21V
egatloVrettimE-ot-rotcello
OEC
6V
egatloVesaB-ot-rettimEV
OBE
5.1V
tnerruCrotcelloCI
C
51Am
noitapissiDrotcelloCP
C
08Wm
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
retemaraPlobmySsnoitidnoC
sgnitaR
tinU
nimpytxam
tnerruCffotuCrotcelloCI
OBC
V
BC
I,V5=
E
0=0.1Aµ
tnerruCffotuCrettimEI
OBE
V
BE
I,V1=
C
0 1Aµ
niaGtnerruCCD h
EF
V
EC
I,V1=
C
Am1= 09002
tcudorPhtdiwdnaB-niaG f
T
V
EC
I,V1=
C
Am1= 5zHG
ecnaticapaCtuptuOboCV
BC
zHM1=f,V1= 55.09.0Fp
niaGrefsnarTdrawroF
|e12S|
2
1 V
EC
I,V1=
C
zHG1=f,Am1= 5.47 Bd
|e12S|
2
2 V
EC
I,V2=
C
zHG1=f,Am3= 5.01Bd
erugiFesioN
1FN V
EC
I,V1=
C
zHG1=f,Am1= 6.25.4Bd
2FN V
EC
I,V2=
C
zHG1=f,Am3= 9.1Bd
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Epitaxial Planar Silicon Transistor
Low-Voltage, Low-Current
High-frequency Amplifier Applications
Ordering number:ENN6340
2SC5537
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
10700TS (KOTO) TA-2425 No.6340–1/3
0.6
0.25
0.2
1.4
0.45
1
3
2
0.3
1.40.8
0.3
0.1
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Package Dimensions
unit:mm
2159
[2SC5537]
Features
· Low voltage, low current operation : f
T
=5GHz typ.
(V
CE
=1V, I
C
=1mA) : ‰ S21e‰
2
=7dB typ (f=1GHz).
: NF=2.6dB typ (f=1GHz).
· Ultrasmall, slim flat-lead package.
(1.4mm · 0.8mm · 0.6mm)
˚C
˚C
Electrical Characteristics at Ta = 25˚C
1 : Base
2 : Emitter
3 : Collector
SANYO : SSFP
Marking : CN
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
OBC
21V
egatloVrettimE-ot-rotcello
OEC
6V
egatloVesaB-ot-rettimEV
OBE
5.1V
tnerruCrotcelloCI
C
51Am
noitapissiDrotcelloCP
C
08Wm
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
retemaraPlobmySsnoitidnoC
sgnitaR
tinU
nimpytxam
tnerruCffotuCrotcelloCI
OBC
V
BC
I,V5=
E
0=0.1Aµ
tnerruCffotuCrettimEI
OBE
V
BE
I,V1=
C
0 1Aµ
niaGtnerruCCD h
EF
V
EC
I,V1=
C
Am1= 09002
tcudorPhtdiwdnaB-niaG f
T
V
EC
I,V1=
C
Am1= 5zHG
ecnaticapaCtuptuOboCV
BC
zHM1=f,V1= 55.09.0Fp
niaGrefsnarTdrawroF
|e12S|
2
1 V
EC
I,V1=
C
zHG1=f,Am1= 5.47 Bd
|e12S|
2
2 V
EC
I,V2=
C
zHG1=f,Am3= 5.01Bd
erugiFesioN
1FN V
EC
I,V1=
C
zHG1=f,Am1= 6.25.4Bd
2FN V
EC
I,V2=
C
zHG1=f,Am3= 9.1Bd