2SC5503
器件描述：VHF to UHF Low-Noise Wide-Band Amplifier Applications
器件厂商：SANYO [Sanyo Semicon Device]
文件大小：45.75KB，共6页
Sponsor by e络盟器件资料摘要：
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Epitaxial Planar Silicon Transistor
VHF to UHF Low-Noise Wide-Band
Amplifier Applications
Ordering number:ENN6222
2SC5503
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
O1899TS (KOTO) TA-1712 No.6222–1/6
0.65 0.65
0.50.65
0.6
0.3
0.15
0 to 0.1
0.2
2.1
0.9
0.7
1.25
0.425
0.425
2.0
1 2
34
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Package Dimensions
unit:mm
2161
[2SC5503]
Features
· Low noise : NF=1.2dB typ (f=1GHz).
· High gain : ‰ S21e‰
2
=15dB typ (f=1GHz).
· High cutoff frequency : f
T
=9.0GHz typ.
˚C
˚C
Electrical Characteristics at Ta = 25˚C
1 : Emitter
2 : Collector
3 : Emitter
4 : Base
SANYO : MCP4
* : The 2SC5503 is classified by 15mA h
FE
as follows : Continued on next page.
gnikraMNG
knaR45
h
EF
081ot09072ot531
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
OBC
61V
egatloVrettimE-ot-rotcello
OEC
8V
egatloVesaB-ot-rettimEV
OBE
5.1V
tnerruCrotcelloCI
C
05Am
noitapissiDrotcelloCP
C
mm052(draobcimarecanodetnuoM
2
· )mm8.0004Wm
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
retemaraPlobmySsnoitidnoC
sgnitaR
tinU
nimpytxam
tnerruCffotuCrotcelloCI
OBC
V
BC
I,V01=
E
0=0.1Aµ
tnerruCffotuCrettimEI
OBE
V
BE
I,V1=
C
0 1Aµ
niaGtnerruCCD h
EF
V
EC
I,V5=
C
Am51= *09*072
tcudorPhtdiwdnaB-niaG f
T
V
EC
I,V5=
C
Am51= 0.9zHG
ecnaticapaCtuptuOboCV
BC
zHM1=f,V01= 6.01.1Fp
ecnaticapaCrefsnarTesreveRerCV
BC
zHM1=f,V01= 3.0Fp
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Epitaxial Planar Silicon Transistor
VHF to UHF Low-Noise Wide-Band
Amplifier Applications
Ordering number:ENN6222
2SC5503
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
O1899TS (KOTO) TA-1712 No.6222–1/6
0.65 0.65
0.50.65
0.6
0.3
0.15
0 to 0.1
0.2
2.1
0.9
0.7
1.25
0.425
0.425
2.0
1 2
34
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Package Dimensions
unit:mm
2161
[2SC5503]
Features
· Low noise : NF=1.2dB typ (f=1GHz).
· High gain : ‰ S21e‰
2
=15dB typ (f=1GHz).
· High cutoff frequency : f
T
=9.0GHz typ.
˚C
˚C
Electrical Characteristics at Ta = 25˚C
1 : Emitter
2 : Collector
3 : Emitter
4 : Base
SANYO : MCP4
* : The 2SC5503 is classified by 15mA h
FE
as follows : Continued on next page.
gnikraMNG
knaR45
h
EF
081ot09072ot531
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
OBC
61V
egatloVrettimE-ot-rotcello
OEC
8V
egatloVesaB-ot-rettimEV
OBE
5.1V
tnerruCrotcelloCI
C
05Am
noitapissiDrotcelloCP
C
mm052(draobcimarecanodetnuoM
2
· )mm8.0004Wm
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
retemaraPlobmySsnoitidnoC
sgnitaR
tinU
nimpytxam
tnerruCffotuCrotcelloCI
OBC
V
BC
I,V01=
E
0=0.1Aµ
tnerruCffotuCrettimEI
OBE
V
BE
I,V1=
C
0 1Aµ
niaGtnerruCCD h
EF
V
EC
I,V5=
C
Am51= *09*072
tcudorPhtdiwdnaB-niaG f
T
V
EC
I,V5=
C
Am51= 0.9zHG
ecnaticapaCtuptuOboCV
BC
zHM1=f,V01= 6.01.1Fp
ecnaticapaCrefsnarTesreveRerCV
BC
zHM1=f,V01= 3.0Fp