The information in this document is subject to change without notice.
NPN SILICON RF TRANSISTOR
2SC5508
NPN SILICON RF TRANSISTOR
FOR LOW NOISE, HIGH-GAIN AMPLIFICATION
FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD
Document No. P13865EJ1V0DS00 (1st edition)
Date Published March 1999 N CP(K)
Printed in Japan
PRELIMINARY DATA SHEET
1999©
FEATURES
• Ideal for low-noise, high-gain amplification applications
• NF = 1.1 dB, Ga = 16 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 5 mA
• Maximum available power gain: MAG = 19 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 20 mA
•fT = 25 GHz technology
• Flat-lead 4-pin thin super mini-mold (t = 0.59 mm)
ORDERING INFORMATION
Part Number Quantity Packaging Style
2SC5508 Loose product (50 pcs)
2SC5508-T2 Taping product (3 kpcs/reel)
• 8 mm wide emboss taping
• 1 pin (emitter), 2 pin (collector) feed hole direction
Remark To order evaluation samples, consult your NEC sales representative (available in 50-pcs units).
ABSOLUTE MAXIMUM RATINGS
Parameter Symbol Ratings Unit
Collector to Base Voltage VCBO 15 V
Collector to Emitter Voltage VCEO 3.3 V
Emitter to Base Voltage VEBO 1.5 V
Collector Current IC 35 mA
Total Power Dissipation Ptot
Note
115 mW
Junction Temperature Tj 150 °C
Storage Temperature Tstg –65 to +150 °C
Note TA = +25 °C (free air)
THERMAL RESISTANCE
Item Symbol Value Unit
Junction to Case Resistance Rth j-c 150 °C/W
Junction to Ambient Resistance Rth j-a 650 °C/W
Because this product uses high-frequency technology, avoid excessive static electricity, etc.