1
Power Transistors
2SC5457
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
n
Features
l High-speed switching
l High collector to base voltage V
CBO
l Wide area of safe operation (ASO)
l Satisfactory linearity of foward current transfer ratio h
FE
n
Absolute Maximum Ratings (T
C
=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CES
V
CEO
V
EBO
I
CP
I
C
I
B
P
C
T
j
T
stg
Ratings
500
500
400
7
6
3
1.2
30
1.0
150
–55 to +150
Unit
V
V
V
V
A
A
A
W
˚C
˚C
n
Electrical Characteristics (T
C
=25˚C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Symbol
I
CBO
I
EBO
V
CEO
h
FE1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
t
on
t
stg
t
f
Conditions
V
CB
= 500V, I
E
= 0
V
EB
= 5V, I
C
= 0
I
C
= 10mA, I
B
= 0
V
CE
= 5V, I
C
= 0.1A
V
CE
= 2V, I
C
= 1.2A
I
C
= 1.5A, I
B
= 0.3A
I
C
= 1.5A, I
B
= 0.3A
V
CE
= 10V, I
C
= 0.2A, f = 1MHz
I
C
= 1.5A, I
B1
= 0.15A, I
B2
= – 0.3A,
V
CC
= 200V
min
400
10
8
typ
10
max
100
100
40
1.0
1.5
1.0
3.0
0.3
Unit
m A
m A
V
V
V
MHz
m s
m s
m s
T
C
=25 C
Ta=25 C
Unit: mm
1:Base
2:Collector
3:Emitter
U Type Package
6.5– 0.1
5.3– 0.1
4.35– 0.1
4.6– 0.1
2.3– 0.1
0.75– 0.1
123
0.93– 0.1
2.5
–
0.1
0.8max
1.0
–
0.2
7.3
–
0.1
1.8
–
0.1
2.3– 0.1
0.5– 0.1
0.5– 0.1
0.1– 0.05
1.0– 0.1
6.5– 0.2
2.3
5.35
4.35
13.3
–
0.3
2.3
–
0.1
5.5
–
0.2
6.0
1.8
0.75
0.6
3
2.3
21
0.5– 0.1
1:Base
2:Collector
3:Emitter
EIAJ:SC–63
U Type Package (Z)
Unit: mm