© 1998
PRELIMINARY DATA SHEET
FEATURE
• Ideal for medium-output applications
• High gain, low noise
• Small reverse transfer capacitance
• Can operate at low voltage
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
PARAMETER SYMBOL RATING UNIT
Collector to Base Voltage VCBO 9V
Collector to Emitter Voltage VCEO 6V
Emitter to Base Voltage VEBO 2V
Collector Current IC 100 mA
Total Power Dissipation PT 200 mW
Junction Temperature Tj 150 °C
Storage Temperature Tstg –65 to +150 °C
SILICON TRANSISTOR
2SC5455
NPN EPITAXIAL SILICON TRANSISTOR
4-PIN MINI MOLD
Document No. P13081EJ1V0DS00 (1st edition)
Date Published February 1998 N CP(K)
Printed in Japan
PACKAGE DIMENSIONS (in mm)
5° 5°
5° 5°
0
to 0.1
0.8
2.9 ± 0.2
(1.8) (1.9)
0.95
0.85
1.1
+0.2 –0.1
0.16
+0.1 –0.06
0.4
41
32
+0.1 –0.05
2.8
+0.2
–0.3
1.5
+0.2
–0.1
0.6
+0.1 –0.05
0.4
+0.1 –0.05
0.4
+0.1 –0.05
PIN CONNECTIONS
1: Collector
2: Emitter
3: Base
4: Emitter
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB = 5 V, IE = 0 0.1 µA
Emitter Cut-off Current IEBO VEB = 1 V, IC = 0 0.1 µA
DC Current Gain hFE VCE = 3 V, IC = 30 mA
Note 1
75 150
Gain Bandwidth Product fT VCE = 3 V, IC = 30 mA, f = 2 GHz 12.0 GHz
Reverse Transfer Capacitance Cre VCB = 3 V, IE = 0, f = 1 MHz
Note 2
0.5 0.7 pF
Insertion Power Gain |S21e|
2
VCE = 3 V, IC = 30 mA, f = 2 GHz 8.0 10.0 dB
Noise Figure NF VCE = 3 V, IC = 7 mA, f = 2 GHz 1.5 2.5 dB
Notes 1. Pulse measurement PW ≤ 350 µs, duty cycle ≤ 2 %
2. Collector to base capacitance measured by capacitance meter (automatic balance bridge method) when
emitter pin is connected to the guard pin.
Because this product uses high-frequency process, avoid excessive input of static electricity, etc.
The information in this document is subject to change without notice.