2SC5420
Ordering number : EN5762
Inverter Lighting Applications
NPN Triple Diffused Planar Silicon Transistor
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN
O1397TS (KOTO) TA-1037 No.5762-1/4
Package Dimensions
unit: mm
2069B-SMP-FD
[2SC5420]
SANYO : SMP-FD
1 : Base
2 : Collector
3 : Emitter
10.2
2.55 2.55
1.2
1.3
4.5
1
2
3
8.8
3.0
1.2
0.8
2.7
0.4
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage V
CBO
1000 V
Collector-to-Emitter Voltage V
CEO
450 V
Emitter-to-Base Voltage V
EBO
9V
Collector Current I
C
5A
Collector Current (Pulse) I
CP
10 A
Collector Dissipation P
C
1.75 W
Tc=25°C 50 W
Junction Temperature Tj 150 °C
Storage Temperature Tstg –55 to +150 °C
Electrical Characteristics at Ta=25°C
Parameter Symbol Conditions
Ratings
min typ max
Unit
Collector Cutoff Current I
CBO
V
CB
=450V, I
E
=0 10 µA
Collector Cutoff Current I
CES
V
CE
=1000V, R
BE
=0 1.0 mA
Collector Sustain Voltage V
CEO(SUS)
I
C
=100mA, I
B
=0 450 V
Emitter Cutoff Current I
EBO
V
EB
=9V, I
C
=0 1.0 mA
C-E Saturation Voltage V
CE(sat)
I
C
=2.5A, I
B
=0.5A 1.0 V
B-E Saturation Voltage V
BE(sat)
I
C
=2.5A, I
B
=0.5A 1.5 V
DC Current Gain h
FE(1)
V
CE
=5V, I
C
=0.3A 30 40 50
h
FE(2)
V
CE
=5V, I
C
=2.0A 10
Storage Time t
stg
I
C
=2.5A, I
B1
=0.5A, I
B2
=–1.0A 2.5 µs
Fall Time t
f
I
C
=2.5A, I
B1
=0.5A, I
B2
=–1.0A 0.15 µs
Features
• High breakdown voltage (V
CBO
=1000V).
• High reliability (Adoption of HVP process).
• Adoption of MBIT process.