2SC5417
Ordering number : EN5817
Inverter Lighting Applications
NPN Triple Diffused Planar Silicon Transistor
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
51598TS (KOTO) TA-1043 No.5817-1/4
Package Dimensions
unit: mm
2079B-TO220FI (LS)
[2SC5417]
SANYO : TO220FI (LS)
1 : Base
2 : Collector
3 : Emitter
3.5
7.2
16.0
16.1
3.6
10.0
0.9
1.2
14.0
0.75
4.5
2.8
0.6
0.7
2.4
2.552.55
1 2 3
3.2
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage V
CBO
1200 V
Collector-to-Emitter Voltage V
CEO
600 V
Emitter-to-Base Voltage V
EBO
9V
Collector Current I
C
3A
Collector Current (Pulse) I
CP
6A
Collector Dissipation P
C
2W
Tc=25°C 25 W
Junction Temperature Tj 150 °C
Storage Temperature Tstg –55 to +150 °C
Electrical Characteristics at Ta=25°C
Parameter Symbol Conditions
Ratings
min typ max
Unit
Collector Cutoff Current I
CBO
V
CB
=600V, I
E
=0 10 µA
Collector Cutoff Current I
CES
V
CE
=1200V, R
BE
=0 1.0 mA
Collector Sustain Voltage V
CEO(sus)
I
C
=100mA, I
B
=0 600 V
Emitter Cutoff Current I
EBO
V
EB
=9V, I
C
=0 1.0 mA
C-E Saturation Voltage V
CE(sat)
I
C
=1.5A, I
B
=0.3A 1.0 V
B-E Saturation Voltage V
BE(sat)
I
C
=1.5A, I
B
=0.3A 1.5 V
DC Current Gain h
FE(1)
V
CE
=5V, I
C
=0.1A 30 40 50
h
FE(2)
V
CE
=5V, I
C
=1.0A 10
Storage Time t
stg
I
C
=1.5A, I
B1
=0.3A, I
B2
=–0.6A 2.5 µs
Fall Time t
f
I
C
=1.5A, I
B1
=0.3A, I
B2
=–0.6A 0.15 µs
Features
• High breakdown voltage.
• High reliability (Adoption of HVP process).
• Adoption of MBIT process.