© 1997
PRELIMINARY DATA SHEET
FEATURE
• High fT
16 GHz TYP.
• High gain
|S21e|
2
= 14 dB TYP.
@f = 2 GHz, VCE = 2 V, IC = 20 mA
• NF = 1.1 dB, @f = 2 GHz VCE = 2 V, IC = 3 mA
• 6-pin Small Mini Mold Package
ORDERING INFORMATION
PART NUMBER QUANTITY PACKING STYLE
2SC5409-T1 3 kpcs/reel 8-mm wide emboss taping, 6-pin
(collector) feed hole direction
Remark To order evaluation samples, consult your NEC sales person-
nel (supported in 50-pcs units).
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL RATING UNIT
Collector to Base Voltage VCBO 5V
Collector to Emitter Voltage VCEO 3V
Emitter to Base Voltage VEBO 2V
Collector Current IC 30 mA
Total Power Dissipation PT 90 mW
Junction Temperature Tj 150 °C
Storage Temperature Tstg –65 to +150 °C
SILICON TRANSISTOR
2SC5409
NPN EPITAXIAL SILICON TRANSISTOR
FOR MICROWAVE HIGH-GAIN AMPLIFICATION
Document No. P12096EJ1V0DS00 (1st edition)
Date Published April 1997 N
Printed in Japan
2.1±0.1
1.25±0.1
2.0±0.2
0.9±0.1 0.7
1.3
B
0 to 0.1
EE
C
EE
0.65
0.65
+0.1 –0
0.2
+0.1 –0
0.15
T97
PACKAGE DIMENSIONS (in mm)
PIN CONNECTIONS
E: Emitter
C: Collector
B: Base
Because this product uses high-frequency process, avoid excessive input of static electricity, etc.