1
Power Transistors
2SC5406, 2SC5406A
Silicon NPN triple diffusion mesa type
For horizontal deflection output
n
Features
l High breakdown voltage, and high reliability through the use of a
glass passivation layer
l High-speed switching
l Wide area of safe operation (ASO)
n
Absolute Maximum Ratings (T
C
=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CES
V
CEO
V
EBO
I
CP
I
C
I
B
P
C
T
j
T
stg
Ratings
1500
1500
600
5
20
14
8
100
3
150
–55 to +150
Unit
V
V
V
V
A
A
A
W
˚C
˚C
T
C
=25 C
Ta=25 C
n
Electrical Characteristics (T
C
=25˚C)
Parameter
Collector cutoff
current
Emitter cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Storage time
Fall time
Symbol
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
f
T
t
stg
t
f
Conditions
V
CB
= 1000V, I
E
= 0
V
CB
= 1500V, I
E
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 5V, I
C
= 7A
I
C
= 7A, I
B
= 1.75A
I
C
= 7A, I
B
= 1.75A
V
CE
= 10V, I
C
= 0, f = 0.5MHz
I
C
= 7A, I
B1
= 1.75A, I
B2
= –3.5A
min
5
typ
3
max
50
1
50
12
3
1.5
4.0
0.3
Unit
m A
mA
m A
V
V
MHz
m s
m s
2SC5406
2SC5406A
Unit: mm
1:Base
2:Collector
3:Emitter
TOP–3E Full Pack Package
15.5– 0.5
26.5
–
0.5
22.0
–
0.5
23.4
18.6
–
0.5
3.3
–
0.3
5.5
–
0.3
2.0
0.7
–
0.1
2.0
2
.0
1.2
10.0
3.0– 0.3
f 3.2– 0.1
4.5
5.45– 0.3
123
5.45– 0.3
1.1– 0.1
2.0– 0.2
4.0
5° 5°
5°
5°
5°
5°
0.7– 0.1