1
Transistor
2SC5379
Silicon NPN epitaxial planer type
For low-voltage low-noise high-frequency oscillation
n
Features
l Low noise figure NF.
l High gain.
l High transition frequency f
T
.
l SS-Mini type package, allowing downsizing of the equipment
and automatic insertion through the tape packing.
n
Absolute Maximum Ratings (Ta=25˚C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Base
2:Emitter EIAJ:SC–75
3:Collector SS–Mini Type Package
1.6– 0.15
1.6
–
0.1
1.0
–
0.1
0.75
–
0.15
0.45
–
0.1
0.5
0.3
0 to 0.1
0.5
0.8– 0.1 0.40.4
0.2
+0.1 –0.05
0.15
+0.1 –0.05
1
2
3
0.2– 0.1
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Ratings
15
8
2
80
125
125
–55 ~ +125
Unit
V
V
V
mA
mW
˚C
˚C
n
Electrical Characteristics (Ta=25˚C)
Parameter
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Transition frequency
Collector output capacitance
Foward transfer gain
Noise figure
Symbol
I
CBO
I
EBO
h
FE
*
f
T
C
ob
| S
21e
|
2
NF
Conditions
V
CB
= 10V, I
E
= 0
V
EB
= 1V, I
C
= 0
V
CE
= 5V, I
C
= 10mA
V
CE
= 5V, I
C
= 10mA, f = 2GHz
V
CB
= 5V, I
E
= 0, f = 1MHz
V
CE
= 5V, I
C
= 10mA, f = 1GHz
V
CE
= 5V, I
C
= 3mA, f = 1GHz
min
80
8.5
typ
7.0
0.6
11.0
1.6
max
1
1
200
1.0
2
Unit
m A
m A
GHz
pF
dB
dB
Marking symbol : HT
*
h
FE
Rank classification
Rank Q R S
h
FE
80 ~ 115 95 ~ 155 135 ~ 200
Marking Symbol HTQ HTR HTS