2SC5369
SILICON TRANSISTOR
Document No. P11644EJ1V0DS00 (1st edition)
Date Published September 1996 P
Printed in Japan
FEATURES
• High fT
14 GHz TYP.
• High gain
| S21e |
2
= 14 dB TYP.
@f = 2 GHz, VCE = 3 V, IC = 10 mA
• NF = 1.3 dB, @f = 2 GHz, VCE= 3 V, IC = 3 mA
• 6-pin small mini mold package
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
PARAMETER SYMBOL RATING UNIT
Collector to Base Voltage VCBO 9V
Collector to Emitter Voltage VCEO 6V
Emitter to Base Voltage VEBO 2V
Collector Current IC 30 mA
Total Power Dissipation PT 150 mW
Junction Temperature TI 150 °C
Storage Temperature Tstg –65 to +150 °C
PACKAGE DIMENSION (in mm)
PIN CONNECTIONS
1. Emitter 4. Emitter
2. Emitter 5. Emitter
3. Base 6. Collector
NPN EPITAXIAL SILICON TRANSISTOR FOR
MICROWAVE AMPLIFICATION
© 1996
PRELIMINARY DATA SHEET
2.1±0.1
1.25±0.1
2.0±0.2
1.3
0.65
0.65
1
2
3
6
5
4
0.2
+0.1 –0
0.15
+0.1 –0
0 to 0.1
0.9±0.1
0.7