DATA SHEET
Silicon Transistor
2SC5338
NPN EPITAXIAL SILICON TRANSISTOR
HIGH FREQUENCY LOW DISTORTION AMPLIFIER
1996©
Document No. P10940EJ1V0DS00 (1st edition)
Date Published April 1996 P
Printed in Japan
PRELIMINARY DATA SHEET
DESCRIPTION
The 2SC5338 is designed for a low distortion and low noise RF amplifier with an operation on the low supply
voltage (VCE = 5 V). This low distortion characteristics is suitable for the CATV, tele-communication, and such.
FEATURES PACKAGE DIMENSIONS
•
High gain (in millimeters)
|S21 |
2
= 10 dB TYP., @VCE = 5 V, Ic = 50 mA, f = 1 GHz
•
Low distortion and low voltage
IM2 = −55 dB TYP., IM3 = −76 dB TYP.
@VCE = 5 V, Ic = 50 mA, Vin = 105 dB µV/75 Ω
•
New power mini-mold package version of a 4-pin type
gain-improved on the 2SC4703
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C)
Parameter Symbol Rating Unit
Collector to Base Voltage VCBO 25 V
Collector to Emitter Voltage VCEO 12 V
Emitter to Base Voltage VEBO 2.5 V
Collector Current IC 150 mA
Total Power Dissipation PT
Note1
1.8 W
Junction Temperature Tj 150 °C
Storage Temperature Tstg –65 to +150 °C
Note 1. 0.7 mm × 16 cm
2
double sided ceramic substrate (Copper plaiting)
1.6±0.2
2.45±0.1
3.95±0.25
1.5±0.1
0.25±0.02
0.42
±0.06
0.46
±0.06
3.0
1.5
0.42
±0.06
0.8 MIN.
PIN CONNECTIONS
E: Emitter
C: Collector
B: Base
C
EB E
4.5±0.1