PRELIMINARY DATA SHEET
1996©
Document No. P10938EJ1V0DS00 (1st edition)
Date Published April 1996 P
Printed in Japan
Silicon Transistor
2SC5336
NPN EPITAXIAL SILICON TRANSISTOR
HIGH FREQUENCY LOW DISTORTION AMPLIFIER
FEATURES PACKAGE DIMENSIONS
•
High gain (in millimeters)
| S21 |
2
= 12 dB TYP, @f = 1 GHz, VCE = 10 V, Ic = 20 mA
•
New power mini-mold package version of a 4-pin type
gain-improved on the 2SC3357
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C)
Parameter Symbol Rating Unit
Collector to Base Voltage VCBO 20 V
Collector to Emitter Voltage VCEO 12 V
Emitter to Base Voltage VEBO 3.0 V
Collector Current IC 100 mA
Total Power Dissipation PT
Note1
1.2 W
Junction Temperature Tj 150 °C
Storage Temperature Tstg –65 to +150 °C
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C)
Parameter Symbol Test Conditions MIN. TYP. MAX. Unit
Collector Cutoff Current ICB0 VCB = 10 V, IE = 0 1.0 µA
Emitter Cutoff Current IEB0 VEB = 1 V, IC = 0 1.0 µA
DC Current Gain hFE VCE = 10 V, IC = 20 mA
Note2
50 120 250
Gain Bandwidth Product fT VCE = 10 V, IC = 20 mA 6.5 GHz
Feed-back Capacitance Cre VCB = 10 V, IE = 0, f = 1.0 MHz
Note3
0.5 0.8 pF
Insertion Power Gain | S21e |
2
VCE = 10 V, IC = 20 mA, f = 1.0 GHz 12.0 dB
Noise Figure NF VCE = 10 V, IC = 7 mA, f = 1.0 GHz 1.1 dB
Noise Figure NF VCE = 10 V, IC = 40 mA, f = 1.0 GHz 1.8 3.0 dB
Notes 2. Pulse measurement : PW ≤ 350 µS, Duty Cycle ≤ 2 %
3. Mesured by a 3-terminal bridge. Emitter and Case should be connected to the guard terminal.
h
FE
Classification
Rank RH RF RE
Marking RH RF RE
hFE 50 to 100 80 to 160 125 to
250
4.5±0.1
1.6±0.2
2.45±0.1
3.95±0.25
1.5±0.1
0.42
±0.06
0.46
±0.06
3.0
1.5
0.42
±0.06
0.8MIN.
C
EB E
PIN CONNECTIONS
E: Emitter
C: Collector
B: Base
0.25±0.02
Note 1. 0.7 mm × 16 cm
2
double sided ceramic substrate (Copper plating)