2SC5333
器件描述：Silicon NPN Triple Diffused Planar Transistor(Series Regulator, Switch, and General Purpose)
器件厂商：SANKEN [Sanken electric]
文件大小：22.52KB，共1页
Sponsor by e络盟器件资料摘要：
134
Silicon NPN Triple Diffused Planar Transistor
Application : Series Regulator, Switch, and General Purpose
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
2SC5333
300
300
6
2
0.2
35(Tc=25°C)
150
–55to+150
Unit
V
V
V
A
A
W
°C
°C
n Absolute maximum ratings n Electrical Characteristics
Symbol
ICBO
IEBO
V(BR)CEO
hFE
VCE(sat)
fT
COB
2SC5333
1.0max
1.0max
300min
30min
1.0max
10typ
75typ
Unit
mA
mA
V
V
MHz
pF
Conditions
VCB=300V
VEB=6V
IC=25mA
VCE=4V, IC=0.5A
IC=1.0A, IB=0.2A
VCE=12V, IE=–0.2A
VCB=10V, f=1MHz
2SC5333
(Ta=25°C) (Ta=25°C)
IC–VCE Characteristics (Typical)
hFE–IC Characteristics (Typical) hFE–IC Temperature Characteristics (Typical)
IC–VBE Temperature Characteristics (Typical)VCE(sat)–IB Characteristics (Typical)
0
0
1
2
2134
Collector-Emitter Voltage VCE(V)
Collector Current I
C
(A)
IB
=200mA
IB=20mA/stop
Safe Operating Area (Single Pulse)fT–IE Characteristics (Typical)
0
3
2
1
0 0.1 0.2 0.3
Base Current IB(A)
Collector-Emitter Saturation Voltage V
CE(sat)
(V)
IC=1A
2A
3 10 1000 2000100
10
50
100
200
Collector Current IC(mA)
DC Current Gain h
FE
(VCE=4V)
Typ
0
2
1
0 1.00.80.60.40.2
Base-Emittor Voltage VBE(V)
Collector Current I
C
(A)
(VCE=4V)
125˚C (Case Temp)
25˚C (Case Temp)
–30˚C (Case Temp)
(VCE=4V)
3 5 10 50 100 500 1000 2000
10
50
200
100
Collector Current IC(mA)
DC Current Gain h
FE
25˚C
–30˚C
125˚C
–0.003 –0.01 –0.05 –0.1 –0.5 –1
10
0
20
Cut-off Frequency f
T
(MH
Z
)
(VCE=12V)
Emitter Current IE(A)
Typ
θ j-a–t Characteristics
Pc–Ta Derating
0.3
1
4
0.5
1 10 100 1000
Time t(ms)
Transient Thermal Resistance
θ
j-a
(˚C/W)
35
30
20
10
2
0
0 25 50 75 100 125 150
Ambient Temperature Ta(˚C)
Maximum Power Dissipation P
C
(W)
With Infinite heatsink
Without Heatsink
n Typical Switching Characteristics (Common Emitter)
VCC
(V)
100
RL
(Ω)
100
IC
(A)
1.0
IB2
(A)
–0.2
ton
(m s)
0.3typ
tstg
(m s)
4.0typ
tf
(m s)
1.0typ
IB1
(A)
0.1
External Dimensions FM20(TO220F)
ø3.3±0.2
10.1±0.2
4.0
±0.2
16.9
±0.3
13.0min
8.4
±0.2
0.8
±0.2
3.9 ±0.2
2.542.54
1.35±0.15
0.85
+0.2
-0.1
1.35±0.15
2.2±0.2
4.2±0.2
2.8
c
0.5
2.4±0.2
0.45
+0.2
-0.1
BEC
a
b
Weight : Approx 2.0g
a. Type No.
b. Lot No.
VB2
(V)
–5
Silicon NPN Triple Diffused Planar Transistor
Application : Series Regulator, Switch, and General Purpose
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
2SC5333
300
300
6
2
0.2
35(Tc=25°C)
150
–55to+150
Unit
V
V
V
A
A
W
°C
°C
n Absolute maximum ratings n Electrical Characteristics
Symbol
ICBO
IEBO
V(BR)CEO
hFE
VCE(sat)
fT
COB
2SC5333
1.0max
1.0max
300min
30min
1.0max
10typ
75typ
Unit
mA
mA
V
V
MHz
pF
Conditions
VCB=300V
VEB=6V
IC=25mA
VCE=4V, IC=0.5A
IC=1.0A, IB=0.2A
VCE=12V, IE=–0.2A
VCB=10V, f=1MHz
2SC5333
(Ta=25°C) (Ta=25°C)
IC–VCE Characteristics (Typical)
hFE–IC Characteristics (Typical) hFE–IC Temperature Characteristics (Typical)
IC–VBE Temperature Characteristics (Typical)VCE(sat)–IB Characteristics (Typical)
0
0
1
2
2134
Collector-Emitter Voltage VCE(V)
Collector Current I
C
(A)
IB
=200mA
IB=20mA/stop
Safe Operating Area (Single Pulse)fT–IE Characteristics (Typical)
0
3
2
1
0 0.1 0.2 0.3
Base Current IB(A)
Collector-Emitter Saturation Voltage V
CE(sat)
(V)
IC=1A
2A
3 10 1000 2000100
10
50
100
200
Collector Current IC(mA)
DC Current Gain h
FE
(VCE=4V)
Typ
0
2
1
0 1.00.80.60.40.2
Base-Emittor Voltage VBE(V)
Collector Current I
C
(A)
(VCE=4V)
125˚C (Case Temp)
25˚C (Case Temp)
–30˚C (Case Temp)
(VCE=4V)
3 5 10 50 100 500 1000 2000
10
50
200
100
Collector Current IC(mA)
DC Current Gain h
FE
25˚C
–30˚C
125˚C
–0.003 –0.01 –0.05 –0.1 –0.5 –1
10
0
20
Cut-off Frequency f
T
(MH
Z
)
(VCE=12V)
Emitter Current IE(A)
Typ
θ j-a–t Characteristics
Pc–Ta Derating
0.3
1
4
0.5
1 10 100 1000
Time t(ms)
Transient Thermal Resistance
θ
j-a
(˚C/W)
35
30
20
10
2
0
0 25 50 75 100 125 150
Ambient Temperature Ta(˚C)
Maximum Power Dissipation P
C
(W)
With Infinite heatsink
Without Heatsink
n Typical Switching Characteristics (Common Emitter)
VCC
(V)
100
RL
(Ω)
100
IC
(A)
1.0
IB2
(A)
–0.2
ton
(m s)
0.3typ
tstg
(m s)
4.0typ
tf
(m s)
1.0typ
IB1
(A)
0.1
External Dimensions FM20(TO220F)
ø3.3±0.2
10.1±0.2
4.0
±0.2
16.9
±0.3
13.0min
8.4
±0.2
0.8
±0.2
3.9 ±0.2
2.542.54
1.35±0.15
0.85
+0.2
-0.1
1.35±0.15
2.2±0.2
4.2±0.2
2.8
c
0.5
2.4±0.2
0.45
+0.2
-0.1
BEC
a
b
Weight : Approx 2.0g
a. Type No.
b. Lot No.
VB2
(V)
–5