2SC5299
Ordering number : EN5293
Ultrahigh-Definition CRT Display
Horizontal Deflection Output Applications
NPN Triple Diffused Planar Silicon Transistor
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN
11697YK (KOTO) TA-0588 No.5293-1/3
Package Dimensions
unit: mm
2039C-TO3PML
[2SC5299]
SANYO: TO3PML
1 : Base
2 : Collector
3 : Emitter
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage V
CBO
1500 V
Collector-to-Emitter Voltage V
CEO
800 V
Emitter-to-Base Voltage V
EBO
6V
Collector Current I
C
10 A
Collector Current (Pulse) I
CP
25 A
Collector Dissipation P
C
3.0 W
Tc=25°C 70 W
Junction Temperature Tj 150 °C
Storage Temperature Tstg –55 to +150 °C
Electrical Characteristics at Ta=25°C
Parameter Symbol Conditions
Ratings
min typ max
Unit
Collector Cutoff Current I
CBO
V
CB
=800V, I
E
=0 10 µA
Collector Cutoff Current I
CES
V
CE
=1500V, R
BE
=0 1.0 mA
Collector Sustain Voltage V
CEO(SUS)
I
C
=100mA, I
B
=0 800 V
Emitter Cutoff Current I
EBO
V
EB
=4V, I
C
=0 1.0 mA
C-E Saturation Voltage V
CE(sat)
I
C
=8A, I
B
=2A 5 V
B-E Saturation Voltage V
BE(sat)
I
C
=8A, I
B
=2A 1.5 V
DC Current Gain h
FE(1)
V
CE
=5V, I
C
=1A 20 30
h
FE(2)
V
CE
=5V, I
C
=8A 4 7
Storage Time t
stg
I
C
=6A, I
B1
=1.2A, I
B2
=–2.4A 3.0 µs
Fall Time t
f
I
C
=6A, I
B1
=1.2A, I
B2
=–2.4A 0.1 0.2 µs
Features
• High Speed : t
f
=100ns typ.
• High Breakdown voltage : V
CBO
=1500V.
• High reliability (Adoption of HVP process).
• Adoption of MBIT process.