Transistors
1
2SC5295
Silicon NPN epitaxial planer type
For 2 GHz band low-noise amplification
a73 Features
• High transition frequency f
T
• Low collector output capacitance C
ob
• SS-mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing.
a73 Absolute Maximum Ratings T
a
= 25°C
1: Base
2: Emitter
3: Collector
EIAJ: SC-75
SS-Mini Type Package (3-pin)
Unit: mm
Parameter Symbol Rating Unit
Collector to base voltage V
CBO
15 V
Collector to emitter voltage V
CEO
10 V
Emitter to base voltage V
EBO
2V
Collector current I
C
65 mA
Collector power dissipation P
C
125 mW
Junction temperature T
j
125 °C
Storage temperature T
stg
−55 to +125 °C
1.6
±0.15
1.6±0.1
5°
1
°
1.0±0.1
0.75
±0.15
0.45
±0.1
0 to 0.1
(0.5)
(0.3)
(0.5)
0.8
±0.1
(0.4)
0.15
+0.1
–0.05
0.2
+0.1
–0.05
1 2
3
0.2
±0.1
Marking Symbol: 3S
a73 Electrical Characteristics T
a
= 25°C ± 3°C
Rank Q R S
h
FE
50 to 120 100 to 170 150 to 300
Parameter Symbol Conditions Min Typ Max Unit
Collector cutoff current I
CBO
V
CB
= 10 V, I
E
= 01µA
Emitter cutoff current I
EBO
V
EB
= 1 V, I
C
= µA
Forward current transfer ratio
*
h
FE
V
CE
= 8 V, I
C
= 20 mA 50 300
Transition frequency f
T
V
CE
= 8 V, I
C
= 15 mA, f = 1.5 GHz 7.0 8.5 GHz
Collector output capacitance C
ob
V
CB
= 10 V, I
E
= 0, f = 1 MHz 0.6 1.0 pF
Forward transfer gain | S
21e
|
2
V
CE
= 8 V, I
C
= 15 mA, f = 1.5 GHz 7 9 dB
Power gain GUM V
CE
= 8 V, I
C
= 15 mA, f = 1.5 GHz 10 dB
Noise figure NF V
CE
= 8 V, I
C
= 7 mA, f = 1.5 GHz 2.2 3.0 dB
Note) *: Rank classification