132
Silicon NPN Triple Diffused Planar Transistor
Application : Resonant Switching Regulator and General Purpose
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
2SC5271
300
200
7
5(Pulse10)
2
30(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
n Absolute maximum ratings n Electrical Characteristics
Symbol
ICBO
IEBO
V(BR)CEO
hFE1
hFE2
VCE(sat)
VBE(sat)
fT
COB
2SC5271
100max
100max
200min
10to30
15min
1.0max
1.5max
10typ
45typ
Unit
m A
m A
V
V
V
MHz
pF
Conditions
VCB=300V
VEB=7V
IC=10mA
VCE=2V, IC=2.5A
VCE=2V, IC=1mA
IC=2.5A, IB=0.5A
IC=2.5A, IB=0.5A
VCE=12V, IE=–0.5A
VCB=10V, f=1MHz
2SC5271
(Ta=25°C) (Ta=25°C) External Dimensions FM20(TO220F)
ø3.3±0.2
10.1±0.2
4.0
±0.2
16.9
±0.3
13.0min
8.4
±0.2
0.8
±0.2
3.9 ±0.2
2.542.54
1.35±0.15
0.85
+0.2
-0.1
1.35±0.15
2.2±0.2
4.2±0.2
2.8
c
0.5
2.4±0.2
0.45
+0.2
-0.1
BEC
a
b
Weight : Approx 2.0g
a. Type No.
b. Lot No.
n Typical Switching Characteristics (Common Emitter)
VCC
(V)
150
RL
(Ω)
60
IC
(A)
2.5
VBB2
(V)
–5
IB2
(A)
–1.0
ton
(m s)
0.3max
tstg
(m s)
1.0max
tf
(m s)
0.1max
IB1
(A)
0.5
VBB1
(V)
10